component
BTB06-800CW
Public Made by Adomby adom
WEIDA TRIACs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| btb06-800cw-etched.step | 14d ago |
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BTB06-800CW
WEIDA · TRIACs · TO-220
BTB06-800CW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac, shown as T1(1) in the symbol on page 1; on-state current up to IT(RMS) 6 A. |
| 2 | T2 | passive | Main terminal 2 of the triac, shown as T2(2) in the symbol on page 1; blocking voltage VDRM/VRRM of 600/800 V. |
| 3 | G | input | Gate trigger terminal, shown as G(3) in the symbol on page 1; IGT max 35 mA for the CW grade (VD=12V, RL=33Ω) and VGT max 1.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current (quadrant I-II-III, CW sensitivity) | IGT | 35 | mA | VD=12V, RL=33Ω, Quadrant I-II-III | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, Quadrant I-II-III | 2 | ||
| Holding current | IH | 35 | mA | IT=100mA | 2 | ||
| Latching current (quadrants I and III) | IL | 50 | mA | IG=1.2IGT, Quadrant I-III | 2 | ||
| Latching current (quadrant II) | IL | 60 | mA | IG=1.2IGT, Quadrant II | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 500 | V/µs | VD=2/3VDRM, Tj=125℃, Gate open | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=8.5A, tp=380μs, Tj=25℃ | 3 | ||
| Repetitive peak off-state current | IDRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak reverse current | IRRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak off-state current at 125℃ | IDRM | 0.5 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Repetitive peak reverse current at 125℃ | IRRM | 0.5 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Repetitive peak off-state voltage | VDRM | 800 | V | Tj=25℃, 800V variant | 1 | ||
| Repetitive peak reverse voltage | VRRM | 800 | V | Tj=25℃, 800V variant | 1 | ||
| RMS on-state current | IT(RMS) | 6 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 60 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 18 | A2s | tp=10ms | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT | 2 | ||
| Peak gate current | IGM | 2 | A | 2 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 2 | |||
| Peak gate power | PGM | 5 | W | 2 | |||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Thermal resistance junction to case (AC), TO-220B (Non-Ins) | Rth(j-c) | 2.2 | ℃/W | junction to case (AC), TO-220B (Non-Insulated) | 3 |
CAD (KiCad official)
- Symbol:
BTB06-800CW - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
btb06-800cw-etched.step/btb06-800cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb06-800cw.step/btb06-800cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (8 pp, sha256
335cee366634f416, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).