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Ray Publish 0.1.0 5a8d453 7h ago

BTB06-600CW

WEIDA · Thyristors (SCR)/Modules · TO-252

BTB06-600CW from WEIDA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1), the triac's current-carrying terminal on the gate side, for a device rated 6 A IT(RMS) and 600 V VDRM/VRRM.
2 T2 passive Main terminal 2 (T2), the other current-carrying terminal of the 6 A, 600 V triac.
3 G input Gate trigger input; for the CW grade IGT is max 35 mA (VD=12V, RL=33Ω) with VGT max 1.5 V in quadrants I-II-III.

Key specifications

Parameter Value
Manufacturer WEIDA
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current, 3-quadrant CW grade (Ⅰ-Ⅱ-Ⅲ) IGT 35 mA VD=12V, RL=33Ω 2
Holding current, CW grade IH 35 mA IT=100mA 2
Latching current, CW grade (Ⅰ-Ⅲ) IL 50 mA IG=1.2IGT 2
Latching current, CW grade (Ⅱ) IL 60 mA IG=1.2IGT 2
Gate non-trigger voltage, all quadrants VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ 2
Critical rate of rise of off-state voltage, CW grade dV/dt 500 V/µs VD=2/3VDRM, Tj=125℃, Gate open 2
On-state voltage VTM 1.5 V ITM=8.5A, tp=380μs, Tj=25℃ 3
Repetitive peak off-state current IDRM, IRRM 5 µA VDRM=VRRM, Tj=25℃ 3
Repetitive peak off-state current IDRM, IRRM 0.5 mA VDRM=VRRM, Tj=125℃ 3
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage (BTB06-600) VDRM 600 V Tj=25℃ 1
Repetitive peak reverse voltage (BTB06-600) VRRM 600 V Tj=25℃ 1
RMS on-state current IT(RMS) 6 A 1
Non repetitive surge peak on-state current ITSM 60 A full cycle, F=50Hz 1
I2t value for fusing I2t 18 A2s tp=10ms 2
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2×IGT 2
Peak gate current IGM 2 A 2
Average gate power dissipation PG(AV) 1 W 2
Peak gate power PGM 5 W 2
Thermal resistance junction to case (AC), TO-252-4R Rth(j-c) 2.8 ℃/W junction to case (AC), TO-251-4R/TO-252-4R 3

CAD (KiCad official)

  • Symbol: BTB06-600CW
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: btb06-600cw-etched.step / btb06-600cw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb06-600cw.step / btb06-600cw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (8 pp, sha256 335cee366634f416, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF