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BTB04-600CW

WEIDA · TRIACs · TO-252

BTB04-600CW from WEIDA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 of the triac (T1(1) in the symbol), the reference terminal for gate triggering, rated for 4 A RMS on-state current.
2 T2 passive Main terminal 2 of the triac (T2(2) in the symbol), rated for VDRM/VRRM of 600/800 V and 4 A RMS on-state current.
3 G input Gate terminal (G(3) in the symbol), with trigger current IGT of 35 mA max for the CW suffix (VD=12 V, RL=33 Ω) and VGT of 1.5 V max.

Key specifications

Parameter Value
Manufacturer WEIDA
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current (CW) IGT 35 mA VD=12V, RL=33Ω, Quadrant I-II-III 2
Gate trigger voltage VGT 1.5 V VD=12V, RL=33Ω 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ, Quadrant I-II-III 2
Holding current (CW) IH 35 mA IT=100mA 2
Latching current I-III (CW) IL 50 mA IG=1.2IGT, Quadrant I-III 2
Latching current II (CW) IL 60 mA IG=1.2IGT, Quadrant II 2
Critical rate of rise of off-state voltage (CW) dV/dt 500 V/µs VD=2/3VDRM, Tj=125℃, Gate open 2
On-state voltage VTM 1.5 V ITM=5.5A, tp=380μs, Tj=25℃ 3
Off-state/reverse leakage current IDRM/IRRM 5 µA VDRM=VRRM, Tj=25℃ 3
Off-state/reverse leakage current IDRM/IRRM 0.5 mA VDRM=VRRM, Tj=125℃ 3
Thermal resistance junction to case (AC) Rth(j-c) 2.8 ℃/W TO-251-4R/TO-252-4R 3
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 600 V Tj=25℃, 600 V grade 1
Repetitive peak reverse voltage VRRM 600 V Tj=25℃, 600 V grade 1
RMS on-state current IT(RMS) 4 A 1
Non repetitive surge peak on-state current ITSM 40 A full cycle, F=50Hz 1
I2t value for fusing I2t 8 A2s tp=10ms 2
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2×IGT 2
Peak gate current IGM 4 A 2
Average gate power dissipation PG(AV) 1 W 2
Peak gate power PGM 5 W 2

CAD (KiCad official)

  • Symbol: BTB04-600CW
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: btb04-600cw-etched.step / btb04-600cw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb04-600cw.step / btb04-600cw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (8 pp, sha256 cdc66c3b113f661a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF