component
BTB04-600BW
Public Made by Adomby adom
WEIDA TRIACs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBTB04-600BW
WEIDA · TRIACs · TO-252
BTB04-600BW from WEIDA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac (the symbol shows T1 on pin 1), the current return and reference for gate triggering; rated for 4 A RMS on-state current (IT(RMS)). |
| 2 | T2 | passive | Main terminal 2 of the triac (the symbol shows T2 on pin 2), which withstands VDRM/VRRM of 600/800 V repetitive peak off-state and reverse voltage. |
| 3 | G | input | Gate trigger input; for the BW grade IGT is max 50 mA and VGT is max 1.5 V in quadrants I-II-III (VD=12 V, RL=33 Ω), with peak gate current IGM of 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Quadrant I-II-III (BW) | IGT | 50 | mA | VD=12V, RL=33Ω, Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Holding current (BW) | IH | 60 | mA | IT=100mA | 2 | ||
| Latching current (BW), Quadrant I and III | IL | 70 | mA | IG=1.2IGT, Ⅰ-Ⅲ | 2 | ||
| Latching current (BW), Quadrant II | IL | 80 | mA | IG=1.2IGT, Ⅱ | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=5.5A, tp=380μs, Tj=25℃ | 3 | ||
| Off-state leakage current | IDRM, IRRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Off-state leakage current at high temperature | IDRM, IRRM | 0.5 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Thermal resistance junction to case (AC), TO-252-4R | Rth(j-c) | 2.8 | ℃/W | junction to case (AC), TO-251-4R/TO-252-4R | 3 | ||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage (600V variant) | VDRM | 600 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage (600V variant) | VRRM | 600 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 4 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 40 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 8 | A2s | tp=10ms | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG=2×IGT | 2 | ||
| Peak gate current | IGM | 4 | A | 2 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 2 | |||
| Peak gate power | PGM | 5 | W | 2 |
CAD (KiCad official)
- Symbol:
BTB04-600BW - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
btb04-600bw-etched.step/btb04-600bw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb04-600bw.step/btb04-600bw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (8 pp, sha256
cdc66c3b113f661a, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).