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BTA330Y-800BTQ
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WeEn Semiconductors TRIACs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BTA330Y-800BTQ
WeEn Semiconductors · TRIACs · TO-220AB
BTA330Y-800BTQ from WeEn Semiconductors, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac; the datasheet lists it as main terminal 1. |
| 2 | T2 | passive | Main terminal 2 of the triac; the datasheet lists it as main terminal 2 and gives 2500 V RMS isolation from all terminals to the external heatsink. |
| 3 | G | input | Gate terminal; the datasheet gives a gate trigger current of at most 50 mA at VD = 12 V and IT = 0.1 A in quadrants T2+G+, T2+G- and T2-G-. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 800 | V | 5 | |||
| RMS on-state current | IT(RMS) | 30 | A | full sine wave; Tmb ≤ 86 °C | 5 | ||
| Non-repetitive peak on-state current | ITSM | 270 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 5 | ||
| Non-repetitive peak on-state current | ITSM | 297 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 5 | ||
| I2t for fusing | I2t | 364.5 | A²s | tp = 10 ms; sine-wave pulse | 5 | ||
| Rate of rise of on-state current | dIT/dt | 100 | A/µs | IG = 70 mA | 5 | ||
| Peak gate current | IGM | 2 | A | 5 | |||
| Peak gate power | PGM | 5 | W | 5 | |||
| Average gate power | PG(AV) | 0.5 | W | over any 20 ms period | 5 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 5 | ||
| Junction temperature | Tj | 150 | °C | 5 | |||
| Thermal resistance junction to mounting base | Rth(j-mb) | 1.7 | K/W | full cycle | 8 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 60 | K/W | in free air | 8 | ||
| Gate trigger current T2+ G+ | IGT | 50 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 9 | ||
| Gate trigger current T2+ G- | IGT | 50 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 9 | ||
| Gate trigger current T2- G- | IGT | 50 | mA | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 9 | ||
| Latching current T2+ G+ | IL | 80 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C | 9 | ||
| Latching current T2+ G- | IL | 100 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C | 9 | ||
| Latching current T2- G- | IL | 80 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C | 9 | ||
| Holding current | IH | 75 | mA | VD = 12 V; Tj = 25 °C | 9 | ||
| On-state voltage | VT | 1.2 | 1.55 | V | IT = 42 A; Tj = 25 °C | 9 | |
| Gate trigger voltage | VGT | 0.9 | 1.3 | V | VD = 12 V; Tj = 25 °C | 9 | |
| Gate trigger voltage | VGT | 0.2 | 0.45 | V | VD = 400 V; Tj = 150 °C | 9 | |
| Off-state current | ID | 10 | µA | VD = 800 V; Tj = 25 °C | 9 | ||
| Off-state current | ID | 0.4 | 2 | mA | VD = 800 V; Tj = 150 °C | 9 | |
| Rate of rise of off-state voltage | dVD/dt | 4000 | V/µs | VDM = 536 V; Tj = 125 °C; exponential waveform; gate open circuit | 9 | ||
| Rate of rise of off-state voltage | dVD/dt | 2000 | V/µs | VDM = 536 V; Tj = 150 °C; exponential waveform; gate open circuit | 9 | ||
| Rate of change of commutating current | dIcom/dt | 20 | A/ms | VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; gate open circuit | 9 | ||
| Rate of change of commutating current | dIcom/dt | 15 | A/ms | VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; gate open circuit | 9 | ||
| RMS isolation voltage | Visol(RMS) | 2500 | V | all terminals to external heatsink; sinusoidal; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Tmb = 25 °C | 8 | ||
| Isolation capacitance | Cisol | 10 | pF | main terminal 2 to external heatsink; f = 1 MHz; Tmb = 25 °C | 8 |
CAD (KiCad official)
- Symbol:
BTA330Y-800BTQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
bta330y-800btq-etched.step/bta330y-800btq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta330y-800btq.step/bta330y-800btq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (15 pp, sha256
b5afceb9a6a3b0b0, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTA330Y-800BTQ
**WeEn Semiconductors** · TRIACs · TO-220AB
BTA330Y-800BTQ from WeEn Semiconductors, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac; the datasheet lists it as main terminal 1. |
| 2 | T2 | passive | Main terminal 2 of the triac; the datasheet lists it as main terminal 2 and gives 2500 V RMS isolation from all terminals to the external heatsink. |
| 3 | G | input | Gate terminal; the datasheet gives a gate trigger current of at most 50 mA at VD = 12 V and IT = 0.1 A in quadrants T2+G+, T2+G- and T2-G-. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | | | 800 | V | | 5 |
| RMS on-state current | IT(RMS) | | | 30 | A | full sine wave; Tmb ≤ 86 °C | 5 |
| Non-repetitive peak on-state current | ITSM | | | 270 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 5 |
| Non-repetitive peak on-state current | ITSM | | | 297 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 5 |
| I2t for fusing | I2t | | | 364.5 | A²s | tp = 10 ms; sine-wave pulse | 5 |
| Rate of rise of on-state current | dIT/dt | | | 100 | A/µs | IG = 70 mA | 5 |
| Peak gate current | IGM | | | 2 | A | | 5 |
| Peak gate power | PGM | | | 5 | W | | 5 |
| Average gate power | PG(AV) | | | 0.5 | W | over any 20 ms period | 5 |
| Storage temperature | Tstg | -40 | | 150 | °C | | 5 |
| Junction temperature | Tj | | | 150 | °C | | 5 |
| Thermal resistance junction to mounting base | Rth(j-mb) | | | 1.7 | K/W | full cycle | 8 |
| Thermal resistance junction to ambient | Rth(j-a) | | 60 | | K/W | in free air | 8 |
| Gate trigger current T2+ G+ | IGT | | | 50 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 9 |
| Gate trigger current T2+ G- | IGT | | | 50 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 9 |
| Gate trigger current T2- G- | IGT | | | 50 | mA | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 9 |
| Latching current T2+ G+ | IL | | | 80 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C | 9 |
| Latching current T2+ G- | IL | | | 100 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C | 9 |
| Latching current T2- G- | IL | | | 80 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C | 9 |
| Holding current | IH | | | 75 | mA | VD = 12 V; Tj = 25 °C | 9 |
| On-state voltage | VT | | 1.2 | 1.55 | V | IT = 42 A; Tj = 25 °C | 9 |
| Gate trigger voltage | VGT | | 0.9 | 1.3 | V | VD = 12 V; Tj = 25 °C | 9 |
| Gate trigger voltage | VGT | 0.2 | 0.45 | | V | VD = 400 V; Tj = 150 °C | 9 |
| Off-state current | ID | | | 10 | µA | VD = 800 V; Tj = 25 °C | 9 |
| Off-state current | ID | | 0.4 | 2 | mA | VD = 800 V; Tj = 150 °C | 9 |
| Rate of rise of off-state voltage | dVD/dt | 4000 | | | V/µs | VDM = 536 V; Tj = 125 °C; exponential waveform; gate open circuit | 9 |
| Rate of rise of off-state voltage | dVD/dt | 2000 | | | V/µs | VDM = 536 V; Tj = 150 °C; exponential waveform; gate open circuit | 9 |
| Rate of change of commutating current | dIcom/dt | 20 | | | A/ms | VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; gate open circuit | 9 |
| Rate of change of commutating current | dIcom/dt | 15 | | | A/ms | VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; gate open circuit | 9 |
| RMS isolation voltage | Visol(RMS) | | | 2500 | V | all terminals to external heatsink; sinusoidal; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Tmb = 25 °C | 8 |
| Isolation capacitance | Cisol | | 10 | | pF | main terminal 2 to external heatsink; f = 1 MHz; Tmb = 25 °C | 8 |
## CAD (KiCad official)
- Symbol: `BTA330Y-800BTQ`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `bta330y-800btq-etched.step` / `bta330y-800btq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bta330y-800btq.step` / `bta330y-800btq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WeEn Semiconductors datasheet](docs/bta330y-800btq-datasheet.pdf) (15 pp, sha256 `b5afceb9a6a3b0b0`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bta330y-800btq-datasheet.pdf)