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BTA26-800BWRG

Public Made by Adom

by adom

STMicroelectronics TRIACs, TO-3P-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTA26-800BWRG

STMicroelectronics · TRIACs · TO-3P-3

BTA26-800BWRG from STMicroelectronics, in a TO-3P-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 (reference terminal of the triac); the gate trigger and holding/latching currents are referenced to it, and it carries up to 25 A RMS on-state current.
2 A2 passive Main terminal A2 of the triac, rated for VDRM/VRRM of 600/800 V and 25 A RMS on-state current; the tab is insulated (2500 VRMS) on the BTA series.
3 G input Gate trigger input, with IGT of 50 mA max at VD = 12 V, RL = 33 Ω for BW versions, and VGT of 1.3 V max.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-3P-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 50 mA VD = 12 V RL = 33 Ω, quadrants I-II-III 2
Gate trigger voltage VGT 1.3 V VD = 12 V RL = 33 Ω, I-II-III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM RL = 3.3 kΩ Tj = 125° C, I-II-III 2
Holding current IH 75 mA IT = 500 mA 2
Latching current, quadrants I-III IL 80 mA IG = 1.2 IGT, I - III 2
Latching current, quadrant II IL 100 mA IG = 1.2 IGT, II 2
Critical rate of rise of off-state voltage dV/dt 1000 V/µs VD = 67 %VDRM gate open Tj = 125° C 2
Critical rate of decrease of commutating current (dI/dt)c 22 A/ms Without snubber Tj = 125° C 2
On-state voltage VTM 1.55 V ITM = 35 A tp = 380 µs Tj = 25° C 3
Threshold voltage Vt0 0.85 V Tj = 125° C 3
Dynamic resistance Rd 16 mΩ Tj = 125° C 3
Off-state/reverse leakage current IDRM/IRRM 5 µA VDRM = VRRM Tj = 25° C 3
Off-state/reverse leakage current IDRM/IRRM 3 mA VDRM = VRRM Tj = 125° C 3
Junction to case thermal resistance (AC) Rth(j-c) 0.9 ° C/W TOP3 Insulated 3
Junction to ambient thermal resistance Rth(j-a) 50 ° C/W TOP3 Insulated 3
Repetitive peak off-state voltage VDRM/VRRM 800 V 800 V version 1
RMS on-state current IT(RMS) 25 A Full sine wave, TOP3 Ins. Tc = 100° C 2
Non repetitive surge peak on-state current ITSM 250 A Full cycle, Tj initial = 25° C, F = 50 Hz t = 20 ms 2
Non repetitive surge peak on-state current ITSM 260 A Full cycle, Tj initial = 25° C, F = 60 Hz t = 16.7 ms 2
I²t value for fusing I²t 340 A²s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125° C 2
Peak gate current IGM 4 A tp = 20 µs Tj = 125° C 2
Average gate power dissipation PG(AV) 1 W Tj = 125° C 2
Storage junction temperature range Tstg -40 150 ° C 2
Operating junction temperature range Tj -40 125 ° C 2

CAD (KiCad official)

  • Symbol: BTA26-800BWRG
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P-3 (KiCad packages3D, STEP)
  • 3D model files: bta26-800bwrg-etched.step / bta26-800bwrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta26-800bwrg.step / bta26-800bwrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (12 pp, sha256 91e179585745382d, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF