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Contents

README

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BTA26-800B

KY · Thyristors (SCR)/Modules · TO-220

BTA26-800B from KY, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1), the triac's main-current terminal on the gate side; the pin 1 position is marked on the TO-220A package drawing and the symbol shows T1(1).
2 T2 passive Main terminal 2 (T2), which carries the on-state current up to IT(RMS) 25 A at Tc=110°C and blocks VDRM/VRRM of 800 V for the BTA26-800.
3 G input Gate, which triggers the triac with VGT ≤1.5 V and IGT ≤35 to ≤50 mA (≤100 mA in quadrant IV on the B version) at VD=12 V, RL=30 Ω.

Key specifications

Parameter Value
Manufacturer KY
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state current, Tj=25°C IDRM 5 uA Tj=25°C 3
Repetitive peak off-state current, Tj=125°C IDRM 3 mA Tj=125°C 3
Repetitive peak reverse current, Tj=25°C IRRM 5 uA Tj=25°C 3
Repetitive peak reverse current, Tj=125°C IRRM 3 mA Tj=125°C 3
Forward on voltage VTM 1.55 V IT=35A tp=380us 3
Gate trigger voltage VGT 1.5 V VD=12V, RL=30Ω 3
Critical rate of rise of on-state current, quadrants I, II, III di/dt 50 A/us I,II,III; F=120Hz, Tj=125°C, IG=2xIGT, tr≤100ns 3
Critical rate of rise of on-state current, quadrant IV di/dt 10 A/us IV; F=120Hz, Tj=125°C, IG=2xIGT, tr≤100ns 3
Gate trigger current, quadrants I, II, III IGT 50 mA I,II,III; VD=12V, RL=30Ω (column B) 3
Gate trigger current, quadrant IV IGT 100 mA IV; VD=12V, RL=30Ω (column B) 3
Holding current IH 80 mA IT=0.2A (column B) 3
Gate non-trigger voltage VDG 0.2 V ALL; VD=VDRM, TJ=125°C 3
Critical rate of rise of commutation voltage dv/dt 500 V/us TJ=125°C; VD=2/3VDRM; gate open circuit (column B) 3
Repetitive peak off-state voltage VDRM/VRRM 800 V BTA26-800 3
R.M.S on-state current IT(RMS) 25 A Tc=110°C 3
Surge on-state current ITSM 280 A tp=16.7ms 3
Surge on-state current ITSM 300 A tp=10ms 3
I²t for fusing I²t 520 A²s Tp=10ms 3
Average gate power dissipation PG(AV) 1 W Tj=125°C 3
Peak gate current IGM 6 A Tj=125°C 3
Operating junction temperature Tj -40 125 °C 3
Storage temperature TSTG -40 150 °C 3
Thermal resistance junction to case Rth(j-c) 1.1 °C/W 3
Thermal resistance junction to ambient Rth(j-a) 50 °C/W 3

CAD (KiCad official)

  • Symbol: BTA26-800B
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: bta26-800b-etched.step / bta26-800b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta26-800b.step / bta26-800b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KY datasheet (7 pp, sha256 595fc0bdcb5a419b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF