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BTA26-600BW

KTP · TRIACs · TO-3P

BTA26-600BW from KTP, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac (T1(1) in the symbol); the case is insulated (2500 VRMS rated) and IT(RMS) is 25 A max at TC≤86℃.
2 T2 passive Main terminal T2 of the triac (T2(2) in the symbol), rated VDRM/VRRM of 600 V and non-repetitive surge ITSM of 250 A (tp=20ms).
3 G input Gate trigger input (G(3)); IGT max 50 mA in quadrants I-II-III, VGT max 1 V, peak gate current IGM 4 A.

Key specifications

Parameter Value
Manufacturer KTP
Package TO-3P
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 600 V Tj=25℃ 1
Repetitive peak reverse voltage VRRM 600 V Tj=25℃ 1
RMS on-state current IT(RMS) 25 A TC≤86℃ 1
Non repetitive surge peak on-state current ITSM 250 A full cycle, tp=20ms, Tj=25℃ 1
Non repetitive surge peak on-state current ITSM 275 A full cycle, tp=16.6ms, Tj=25℃ 1
I2t value for fusing I2t 340 A2s tp=10ms, Tj=25℃ 1
Critical rate of rise of on-state current dI/dt 100 A/μs IG=2×IGT, f=100Hz, Tj=125℃ 1
Peak gate current IGM 4 A tp=20μs, Tj=125℃ 1
Average gate power dissipation PG(AV) 0.5 W Tj=125℃ 1
Peak gate power PGM 10 W 2
Peak pulse voltage Vpp 5 kV Tj=25℃; non-repetitive, off-state; FIG.7 2
Gate trigger current IGT 50 mA VD=12V, RL=33Ω; Quadrant Ⅰ-Ⅱ-Ⅲ 2
Gate trigger voltage VGT 1 V VD=12V, RL=33Ω; Quadrant Ⅰ-Ⅱ-Ⅲ 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3KΩ; Quadrant Ⅰ-Ⅱ-Ⅲ 2
Latching current IL 80 mA IG=1.2IGT; Quadrant Ⅰ-Ⅲ 2
Latching current IL 100 mA IG=1.2IGT; Quadrant Ⅱ 2
Holding current IH 75 mA IT=500mA 2
Critical rate of rise of off-state voltage dV/dt 2500 V/μs VD=400V, gate open, Tj=125℃ 2
Critical rate of decrease of commutating current (dI/dt)c 25 A/ms (dV/dt)c=20V/μs, Tj=125℃ 2
On-state voltage VTM 1.5 V ITM=35A, tp=380μs, Tj=25℃ 2
Threshold voltage VTO 0.73 V Tj=125℃ 2
Dynamic resistance RD 25 mΩ Tj=125℃ 2
Repetitive peak off-state current IDRM 5 μA VD=VDRM, VR=VRRM, Tj=25℃ 2
Repetitive peak reverse current IRRM 1.5 mA Tj=125℃ 2
Thermal resistance junction to case (AC) Rth(j-c) 1.1 ℃/W junction to case (AC) 2
Thermal resistance junction to ambient (AC) Rth(j-a) 50 ℃/W junction to ambient (AC) 2

CAD (KiCad official)

  • Symbol: BTA26-600BW
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: bta26-600bw-etched.step / bta26-600bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta26-600bw.step / bta26-600bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KTP datasheet (5 pp, sha256 0435cee06a9ce713, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF