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BTA16-HXY

Public Made by Adom

by adom

HXY MOSFET TRIACs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTA16-HXY

HXY MOSFET · TRIACs · TO-220

BTA16-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Main terminal A1, the reference for the A2 polarity values, carrying the triac on-state current (IT(RMS) 16 A) and blocking up to VDRM/VRRM 600 V.
2 ANODE passive Main terminal A2, whose on-state and off-state values are referenced to A1, with IT(RMS) 16 A and VDRM/VRRM 600 V.
3 GATE input Gate trigger terminal with peak gate current IGM 4 A (tp = 20 µs, Tj = 125 °C) and average gate power PG(AV) 1 W limits, and IGT max 25 mA in quadrants I-II-III and 50 mA in quadrant IV for standard types.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM/VRRM VDRM/VRRM 600 V 1
RMS on-state current IT(RMS) 16 A Tc = 100 °C 1
Non repetitive surge peak on-state current 50 Hz ITSM 160 A F = 50 Hz tp = 20 ms 1
Non repetitive surge peak on-state current 60 Hz ITSM 168 A F = 60 Hz tp = 16.7 ms 1
I2t value for fusing I2t 144 A2s tp = 10 ms 1
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C 1
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 1
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 1
Storage junction temperature range Tstg -40 150 °C 1
Operating junction temperature range Tj -40 125 °C 1
Threshold on-state voltage VTO 0.85 V 125 °C 2
Dynamic resistance RD 25 mΩ 125 °C 2
Peak off-state current IDRM/IRRM 5 µA VDRM = VRRM, 25 °C 2
Peak off-state current IDRM/IRRM 2 mA VDRM = VRRM, 125 °C 2
On-state voltage VT 1.55 V ITM = 22.5 A, tp = 380 µs, 25 °C 2
Gate trigger current quadrants I-II-III IGT 25 mA VD = 12 V, RL = 33 Ω, quadrants I-II-III 2
Gate trigger current quadrant IV IGT 50 mA VD = 12 V, RL = 33 Ω, quadrant IV 2
Gate trigger voltage VGT 1.3 V All quadrants 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, all quadrants 2
Holding current IH 25 mA IT = 500 mA 2
Latching current quadrants I-III-IV IL 40 mA IG = 1.2 IGT, quadrants I-III-IV 2
Latching current quadrant II IL 80 mA IG = 1.2 IGT, quadrant II 2
Critical rate of rise of off-state voltage dV/dt 200 V/µs VD = 67 % VDRM, gate open, Tj = 125 °C 2
Critical rate of decrease of main current (dV/dt)c 5 V/µs (dI/dt)c = 7 A/ms, Tj = 125 °C 2
Thermal resistance junction to case (AC) Rth(j-c) 2.1 °C/W 3
Thermal resistance junction to ambient Rth(j-a) 60 °C/W 3

CAD (KiCad official)

  • Symbol: BTA16-HXY
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: bta16-hxy-etched.step / bta16-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta16-hxy.step / bta16-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 abcced227a437836, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF