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BTA16-800SWRG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

BTA16-800SWRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1, the reference terminal for gate and A2 measurements; the triac conducts up to 16 A RMS (IT(RMS)) between A2 and A1.
2 A2 passive Main terminal A2, which carries the 16 A RMS on-state current and is rated for VDRM/VRRM of 800 V for this part; the tab is insulated (2500 VRMS) in the BTA series.
3 G input Gate trigger input; the BTA16-800SW has a maximum IGT of 10 mA and a maximum VGT of 1.3 V (VD = 12 V, RL = 30 Ω).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 10 mA VD = 12 V, RL = 30 Ω, quadrants I-II-III 3
Gate trigger voltage VGT 1.3 V VD = 12 V, RL = 30 Ω, quadrants I-II-III 3
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C 3
Holding current IH 15 mA IT = 500 mA 3
Latching current I-III IL 25 mA IG = 1.2 IGT, quadrants I - III 3
Latching current II IL 30 mA IG = 1.2 IGT, quadrant II 3
Critical rate of rise of off-state voltage dV/dt 40 V/µs VD = 67 % VDRM gate open, Tj = 125 °C 3
On-state voltage VT 1.55 V ITM = 22.5 A, tp = 380 µs, Tj = 25 °C 2
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 2
Dynamic resistance RD 25 mΩ Tj = 125 °C 2
Off-state leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 2
Off-state leakage current IDRM/IRRM 2 mA VDRM = VRRM, Tj = 125 °C 2
RMS on-state current IT(RMS) 16 A Full sine wave, TO-220AB Ins., Tc = 86 °C 2
Non repetitive surge peak on-state current ITSM 160 A F = 50 Hz, tp = 20 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 168 A F = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C 2
I2t value for fusing I2t 144 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Junction to case thermal resistance Rth(j-c) 2.1 °C/W AC, TO-220AB insulated 3
Junction to ambient thermal resistance Rth(j-a) 60 °C/W TO-220AB / TO-220AB ins 3

CAD (KiCad official)

  • Symbol: BTA16-800SWRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bta16-800swrg-etched.step / bta16-800swrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta16-800swrg.step / bta16-800swrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 062eb831ce824cad, retrieved 2026-11-12, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF