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page.json bta16-800bwrg: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 28d ago
README.md bta16-800bwrg: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 28d ago

BTA16-800BWRG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

BTA16-800BWRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 bidirectional Main terminal (Anode 1) of the triac; conducts up to 16 A RMS at 100°C case temperature when triggered via the gate terminal.
2 A2 bidirectional Main terminal (Anode 2) of the triac; conducts up to 16 A RMS at 100°C case temperature when triggered via the gate terminal.
3 G input Gate control input terminal; triggers the triac with maximum gate trigger current of 50 mA and maximum gate threshold voltage of 1.3 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current (I-II-III) IGT 50 mA VD = 12 V RL = 33 Ω 2
Gate trigger voltage (I-II-III) VGT 1.3 V I - II - III 2
Gate non-trigger voltage (I-II-III) VGD 0.2 V VD = VDRM RL = 3.3 kΩ Tj = 125°C, I - II - III 2
Holding current IH 50 mA IT = 500 mA 2
Latching current (I - III) IL 70 mA IG = 1.2 IGT, I - III 2
Latching current (II) IL 80 mA IG = 1.2 IGT, II 2
Critical rate of rise of off-state voltage dV/dt 1000 V/µs VD = 67 %VDRM gate open Tj = 125°C 2
Critical rate of decrease of main current without snubber (dI/dt)c 14 A/ms Without snubber Tj = 125°C 2
On-state voltage VT 1.55 V ITM = 22.5 A tp = 380 µs Tj = 25°C 3
Threshold voltage Vto 0.85 V Tj = 125°C 3
Dynamic resistance Rd 25 mΩ Tj = 125°C 3
Repetitive peak off-state current IDRM/IRRM 5 µA VDRM = VRRM Tj = 25°C 3
Repetitive peak off-state current IDRM/IRRM 2 mA VDRM = VRRM Tj = 125°C 3
RMS on-state current IT(RMS) 16 A TO-220AB Ins. Tc = 15°C (full sine wave) 2
Non repetitive surge peak on-state current ITSM 160 A F = 50 Hz t = 20 ms, full cycle Tj initial = 25°C 2
Non repetitive surge peak on-state current ITSM 168 A F = 60 Hz t = 16.7 ms, full cycle Tj initial = 25°C 2
I²t value for fusing I²t 144 A²s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 125°C 2
Peak gate current IGM 4 A tp = 20 µs Tj = 125°C 2
Average gate power dissipation PG(AV) 1 W Tj = 125°C 2
Repetitive peak off-state voltage (800 V variant) VDRM/VRRM 800 V 800 V variant per Table 1 and Table 7; Tj not stated 1
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Junction to case (AC), insulated Rth(j-c) 2.1 °C/W TO-220AB Insulated 3
Junction to ambient Rth(j-a) 60 °C/W TO-220AB / TO-220AB Insulated, S = Copper surface under tab 3

CAD (KiCad official)

  • Symbol: BTA16-800BWRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bta16-800bwrg-etched.step / bta16-800bwrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta16-800bwrg.step / bta16-800bwrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (9 pp, sha256 08adf9ffed6bb91f, retrieved 2026-09-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF