component
BTA16-800BWRG
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
bta16-800bwrg: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+339
README.md+32@@ -21,6 +21,38 @@ BTA16-800BWRG from STMicroelectronics, in a TO-220AB. Pinout and pin description | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate trigger current (I-II-III) | IGT | | | 50 | mA | VD = 12 V RL = 33 Ω | 2 |+| Gate trigger voltage (I-II-III) | VGT | | | 1.3 | V | I - II - III | 2 |+| Gate non-trigger voltage (I-II-III) | VGD | 0.2 | | | V | VD = VDRM RL = 3.3 kΩ Tj = 125°C, I - II - III | 2 |+| Holding current | IH | | | 50 | mA | IT = 500 mA | 2 |+| Latching current (I - III) | IL | | | 70 | mA | IG = 1.2 IGT, I - III | 2 |+| Latching current (II) | IL | | | 80 | mA | IG = 1.2 IGT, II | 2 |+| Critical rate of rise of off-state voltage | dV/dt | 1000 | | | V/µs | VD = 67 %VDRM gate open Tj = 125°C | 2 |+| Critical rate of decrease of main current without snubber | (dI/dt)c | 14 | | | A/ms | Without snubber Tj = 125°C | 2 |+| On-state voltage | VT | | | 1.55 | V | ITM = 22.5 A tp = 380 µs Tj = 25°C | 3 |+| Threshold voltage | Vto | | | 0.85 | V | Tj = 125°C | 3 |+| Dynamic resistance | Rd | | | 25 | mΩ | Tj = 125°C | 3 |+| Repetitive peak off-state current | IDRM/IRRM | | | 5 | µA | VDRM = VRRM Tj = 25°C | 3 |+| Repetitive peak off-state current | IDRM/IRRM | | | 2 | mA | VDRM = VRRM Tj = 125°C | 3 |+| RMS on-state current | IT(RMS) | | | 16 | A | TO-220AB Ins. Tc = 15°C (full sine wave) | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 160 | A | F = 50 Hz t = 20 ms, full cycle Tj initial = 25°C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 168 | A | F = 60 Hz t = 16.7 ms, full cycle Tj initial = 25°C | 2 |+| I²t value for fusing | I²t | | | 144 | A²s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 125°C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs Tj = 125°C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125°C | 2 |+| Repetitive peak off-state voltage (800 V variant) | VDRM/VRRM | | | 800 | V | 800 V variant per Table 1 and Table 7; Tj not stated | 1 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Junction to case (AC), insulated | Rth(j-c) | | | 2.1 | °C/W | TO-220AB Insulated | 3 |+| Junction to ambient | Rth(j-a) | | | 60 | °C/W | TO-220AB / TO-220AB Insulated, S = Copper surface under tab | 3 |+ ## CAD (KiCad official) - Symbol: `BTA16-800BWRG`
page.json+307@@ -135,6 +135,313 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "08adf9ffed6bb91f",+ "rows": [+ {+ "name": "Gate trigger current (I-II-III)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VD = 12 V RL = 33 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage (I-II-III)",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage (I-II-III)",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM RL = 3.3 kΩ Tj = 125°C, I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IT = 500 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (I - III)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "IG = 1.2 IGT, I - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (II)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "IG = 1.2 IGT, II",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 1000,+ "typ": null,+ "max": null,+ "conditions": "VD = 67 %VDRM gate open Tj = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of main current without snubber",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 14,+ "typ": null,+ "max": null,+ "conditions": "Without snubber Tj = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM = 22.5 A tp = 380 µs Tj = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "Vto",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "Rd",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "Tj = 125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM Tj = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VDRM = VRRM Tj = 125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "TO-220AB Ins. Tc = 15°C (full sine wave)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "F = 50 Hz t = 20 ms, full cycle Tj initial = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 168,+ "conditions": "F = 60 Hz t = 16.7 ms, full cycle Tj initial = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I²t value for fusing",+ "symbol": "I²t",+ "kind": "absolute_maximum",+ "unit": "A²s",+ "min": null,+ "typ": null,+ "max": 144,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs Tj = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage (800 V variant)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "800 V variant per Table 1 and Table 7; Tj not stated",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to case (AC), insulated",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "TO-220AB Insulated",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TO-220AB / TO-220AB Insulated, S = Copper surface under tab",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],