component
BTA16-600CRG
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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bta16-600crg: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+352
README.md+33@@ -31,6 +31,39 @@ Same part, different packaging or reel option. - `BTA16-600CRGT1610-600G` - `BTA16-600CRGT1635-600G` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Repetitive peak off-state voltage (600 V variant) | VDRM/VRRM | | | 600 | V | Device summary (Table 1), 600 V variant | 1 |+| On-state rms current (insulated TO-220AB) | IT(RMS) | | | 16 | A | Full sine wave, TO-220AB insulated Tc = 86 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 160 | A | F = 50 Hz t = 20 ms, full cycle, Tj initial = 25 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 168 | A | F = 60 Hz t = 16.7 ms, full cycle, Tj initial = 25 °C | 2 |+| I²t value for fusing | I²t | | | 144 | A²s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Storage temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Maximum operating junction temperature | Tj | -40 | | 125 | °C | | 2 |+| Gate trigger current (standard C, quadrants I-II-III) | IGT | | | 25 | mA | VD = 12 V, RL = 33 Ω, quadrants I-II-III | 3 |+| Gate trigger current (standard C, quadrant IV) | IGT | | | 50 | mA | VD = 12 V, RL = 33 Ω, quadrant IV | 3 |+| Gate trigger voltage | VGT | | | 1.3 | V | VD = 12 V, RL = 33 Ω, all quadrants | 3 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, all quadrants | 3 |+| Holding current | IH | | | 25 | mA | IT = 500 mA | 3 |+| Latching current (quadrants I, III, IV) | IL | | | 40 | mA | IG = 1.2 IGT, quadrants I, III, IV | 3 |+| Latching current (quadrant II) | IL | | | 80 | mA | IG = 1.2 IGT, quadrant II | 3 |+| Critical rate of rise of off-state voltage | dV/dt | 200 | | | V/µs | VD = 67 %VDRM, gate open, Tj = 125 °C | 3 |+| Critical rate of decrease of main current | (dV/dt)c | 5 | | | V/µs | (dI/dt)c = 7 A/ms, Tj = 125 °C | 3 |+| On-state voltage | VT | | | 1.55 | V | ITM = 22.5 A, tp = 380 µs, Tj = 25 °C | 3 |+| Threshold voltage | Vto | | | 0.85 | V | Tj = 125 °C | 3 |+| Dynamic resistance | Rd | | | 25 | mΩ | Tj = 125 °C | 3 |+| Off-state leakage current | IDRM/IRRM | | | 5 | µA | VDRM = VRRM, Tj = 25 °C | 3 |+| Off-state leakage current | IDRM/IRRM | | | 2 | mA | VDRM = VRRM, Tj = 125 °C | 3 |+| Thermal resistance junction to case (AC), TO-220AB insulated | Rth(j-c) | | | 2.1 | °C/W | Junction to case (AC), TO-220AB insulated | 3 |+| Thermal resistance junction to ambient, TO-220AB insulated | Rth(j-a) | | | 60 | °C/W | Junction to ambient, S = 1 cm² (copper surface under tab) | 3 |+ ## CAD (KiCad official) - Symbol: `BTA16-600CRG`
page.json+319@@ -122,6 +122,325 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "480666ad30d719e7",+ "rows": [+ {+ "name": "Repetitive peak off-state voltage (600 V variant)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "Device summary (Table 1), 600 V variant",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "On-state rms current (insulated TO-220AB)",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Full sine wave, TO-220AB insulated Tc = 86 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "F = 50 Hz t = 20 ms, full cycle, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 168,+ "conditions": "F = 60 Hz t = 16.7 ms, full cycle, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I²t value for fusing",+ "symbol": "I²t",+ "kind": "absolute_maximum",+ "unit": "A²s",+ "min": null,+ "typ": null,+ "max": 144,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum operating junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (standard C, quadrants I-II-III)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VD = 12 V, RL = 33 Ω, quadrants I-II-III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (standard C, quadrant IV)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VD = 12 V, RL = 33 Ω, quadrant IV",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "VD = 12 V, RL = 33 Ω, all quadrants",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, all quadrants",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "IT = 500 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Latching current (quadrants I, III, IV)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "IG = 1.2 IGT, quadrants I, III, IV",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Latching current (quadrant II)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "IG = 1.2 IGT, quadrant II",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 200,+ "typ": null,+ "max": null,+ "conditions": "VD = 67 %VDRM, gate open, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of main current",+ "symbol": "(dV/dt)c",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "(dI/dt)c = 7 A/ms, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM = 22.5 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "Vto",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "Rd",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VDRM = VRRM, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case (AC), TO-220AB insulated",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "Junction to case (AC), TO-220AB insulated",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient, TO-220AB insulated",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Junction to ambient, S = 1 cm² (copper surface under tab)",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [