component
BTA16-600CRG
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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Contents
README
markdownBTA16-600CRG
STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB
BTA16-600CRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal 1 (Anode 1 / MT1). One of the two bidirectional AC current-carrying terminals of the triac; carries load current up to 16 A RMS. Gate trigger voltages/currents are referenced to A1. |
| 2 | A2 | passive | Main terminal 2 (Anode 2 / MT2), electrically connected to the package tab (insulated from the mounting surface at 2500 VRMS on the BTA series). Second bidirectional AC current terminal, rated 16 A RMS on-state current and VDRM/VRRM = 600 V. |
| 3 | G | input | Gate trigger input. Standard 4-quadrant sensitivity: IGT = 25 mA typ / 50 mA max, VGT = 1.3 V max. Peak gate current IGM = 4 A (tp = 20 µs), average gate power PG(AV) = 1 W max. |
| TAB | A2 | passive | Metal mounting tab, internally connected to A2. On the BTA (insulated) variant the tab is electrically isolated from A2 with respect to the heatsink at 2500 VRMS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
BTA16-600CRGBTA16-600CRGBTB16-600CRGBTA16-600CRGT1610-600GBTA16-600CRGT1635-600G
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage (600 V variant) | VDRM/VRRM | 600 | V | Device summary (Table 1), 600 V variant | 1 | ||
| On-state rms current (insulated TO-220AB) | IT(RMS) | 16 | A | Full sine wave, TO-220AB insulated Tc = 86 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 160 | A | F = 50 Hz t = 20 ms, full cycle, Tj initial = 25 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 168 | A | F = 60 Hz t = 16.7 ms, full cycle, Tj initial = 25 °C | 2 | ||
| I²t value for fusing | I²t | 144 | A²s | tp = 10 ms | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C | 2 | ||
| Peak gate current | IGM | 4 | A | tp = 20 µs, Tj = 125 °C | 2 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj = 125 °C | 2 | ||
| Storage temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Maximum operating junction temperature | Tj | -40 | 125 | °C | 2 | ||
| Gate trigger current (standard C, quadrants I-II-III) | IGT | 25 | mA | VD = 12 V, RL = 33 Ω, quadrants I-II-III | 3 | ||
| Gate trigger current (standard C, quadrant IV) | IGT | 50 | mA | VD = 12 V, RL = 33 Ω, quadrant IV | 3 | ||
| Gate trigger voltage | VGT | 1.3 | V | VD = 12 V, RL = 33 Ω, all quadrants | 3 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, all quadrants | 3 | ||
| Holding current | IH | 25 | mA | IT = 500 mA | 3 | ||
| Latching current (quadrants I, III, IV) | IL | 40 | mA | IG = 1.2 IGT, quadrants I, III, IV | 3 | ||
| Latching current (quadrant II) | IL | 80 | mA | IG = 1.2 IGT, quadrant II | 3 | ||
| Critical rate of rise of off-state voltage | dV/dt | 200 | V/µs | VD = 67 %VDRM, gate open, Tj = 125 °C | 3 | ||
| Critical rate of decrease of main current | (dV/dt)c | 5 | V/µs | (dI/dt)c = 7 A/ms, Tj = 125 °C | 3 | ||
| On-state voltage | VT | 1.55 | V | ITM = 22.5 A, tp = 380 µs, Tj = 25 °C | 3 | ||
| Threshold voltage | Vto | 0.85 | V | Tj = 125 °C | 3 | ||
| Dynamic resistance | Rd | 25 | mΩ | Tj = 125 °C | 3 | ||
| Off-state leakage current | IDRM/IRRM | 5 | µA | VDRM = VRRM, Tj = 25 °C | 3 | ||
| Off-state leakage current | IDRM/IRRM | 2 | mA | VDRM = VRRM, Tj = 125 °C | 3 | ||
| Thermal resistance junction to case (AC), TO-220AB insulated | Rth(j-c) | 2.1 | °C/W | Junction to case (AC), TO-220AB insulated | 3 | ||
| Thermal resistance junction to ambient, TO-220AB insulated | Rth(j-a) | 60 | °C/W | Junction to ambient, S = 1 cm² (copper surface under tab) | 3 |
CAD (KiCad official)
- Symbol:
BTA16-600CRG - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
bta16-600crg-etched.step/bta16-600crg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta16-600crg.step/bta16-600crg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (10 pp, sha256
480666ad30d719e7, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).