component
BTA16-600BQ
Public Made by Adomby adom
WeEn Semiconductors TRIACs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BTA16-600BQ
WeEn Semiconductors · TRIACs · TO-220
BTA16-600BQ from WeEn Semiconductors, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 (T1) of the triac, rated for VDRM 600 V and IT(RMS) 16 A per the datasheet. |
| 2 | T2 | passive | Main terminal 2 (T2) of the triac, rated for VDRM 600 V and IT(RMS) 16 A per the datasheet. |
| 3 | G | input | Gate terminal used to trigger the triac in all four quadrants, with IGT of 10 to 50 mA (70 mA max in T2- G+) at Tj = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 600 | V | 3 | |||
| RMS on-state current | IT(RMS) | 16 | A | full sine wave; Tmb ≤ 112°C; Fig. 1; Fig. 2; Fig. 3 | 3 | ||
| Non-repetitive peak on-state current | ITSM | 160 | A | full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5 | 3 | ||
| Non-repetitive peak on-state current | ITSM | 176 | A | full sine wave; tp = 16.7 ms; Tj(init) = 25 °C | 3 | ||
| I2t for fusing | I2t | 128 | A2s | tp = 10ms; sine wave | 3 | ||
| Rate of rise of on-state current | dIT/dt | 50 | A/μs | IG = 150mA | 3 | ||
| Peak gate current | IGM | 2 | A | 3 | |||
| Peak gate power | PGM | 5 | W | 3 | |||
| Average gate power | PG(AV) | 0.5 | W | average gate power over any 20 ms period | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| RMS isolation voltage | Visol(RMS) | 2500 | V | 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free | 5 | ||
| Thermal resistance from junction to mounting base | Rth(j-mb) | 1.9 | K/W | Fig. 6 | 5 | ||
| Gate trigger current | IGT | 10 | 50 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 | 6 | |
| Gate trigger current | IGT | 10 | 70 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 | 6 | |
| Latching current | IL | 60 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 | 6 | ||
| Latching current | IL | 90 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 | 6 | ||
| Holding current | IH | 60 | mA | VD = 12 V; Tj = 25 °C; Fig. 9 | 6 | ||
| On-state voltage | VT | 1.22 | 1.5 | V | IT = 20 A; Tj = 25 °C; Fig. 10 | 6 | |
| Gate trigger voltage | VGT | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 | 6 | |
| Gate trigger voltage | VGT | 0.25 | 0.4 | V | VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11 | 6 | |
| Off-state current | ID | 5 | μA | VD = 600 V; Tj = 25 °C | 6 | ||
| Off-state current | ID | 0.4 | 2 | mA | VD = 600 V; Tj = 150 °C | 6 | |
| Rate of rise of off-state voltage | dVD/dt | 500 | V/μs | VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 6 | ||
| Rate of rise of off-state voltage | dVD/dt | 400 | V/μs | VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 6 | ||
| Rate of change of commutating current | dIcom/dt | 2 | A/ms | VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition | 6 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 60 | K/W | in free air | 5 | ||
| Isolation capacitance from cathode to external heatsink | Cisol | 10 | PF | from cathode to external heatsink | 5 |
CAD (KiCad official)
- Symbol:
BTA16-600BQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
bta16-600bq-etched.step/bta16-600bq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta16-600bq.step/bta16-600bq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (12 pp, sha256
a4d6e3f5a0e077fb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTA16-600BQ
**WeEn Semiconductors** · TRIACs · TO-220
BTA16-600BQ from WeEn Semiconductors, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 (T1) of the triac, rated for VDRM 600 V and IT(RMS) 16 A per the datasheet. |
| 2 | T2 | passive | Main terminal 2 (T2) of the triac, rated for VDRM 600 V and IT(RMS) 16 A per the datasheet. |
| 3 | G | input | Gate terminal used to trigger the triac in all four quadrants, with IGT of 10 to 50 mA (70 mA max in T2- G+) at Tj = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | | | 600 | V | | 3 |
| RMS on-state current | IT(RMS) | | | 16 | A | full sine wave; Tmb ≤ 112°C; Fig. 1; Fig. 2; Fig. 3 | 3 |
| Non-repetitive peak on-state current | ITSM | | | 160 | A | full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5 | 3 |
| Non-repetitive peak on-state current | ITSM | | | 176 | A | full sine wave; tp = 16.7 ms; Tj(init) = 25 °C | 3 |
| I2t for fusing | I2t | | | 128 | A2s | tp = 10ms; sine wave | 3 |
| Rate of rise of on-state current | dIT/dt | | | 50 | A/μs | IG = 150mA | 3 |
| Peak gate current | IGM | | | 2 | A | | 3 |
| Peak gate power | PGM | | | 5 | W | | 3 |
| Average gate power | PG(AV) | | | 0.5 | W | average gate power over any 20 ms period | 3 |
| Storage temperature | Tstg | -40 | | 150 | °C | | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| RMS isolation voltage | Visol(RMS) | | | 2500 | V | 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free | 5 |
| Thermal resistance from junction to mounting base | Rth(j-mb) | | | 1.9 | K/W | Fig. 6 | 5 |
| Gate trigger current | IGT | 10 | | 50 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 | 6 |
| Gate trigger current | IGT | 10 | | 70 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 | 6 |
| Latching current | IL | | | 60 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 | 6 |
| Latching current | IL | | | 90 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 | 6 |
| Holding current | IH | | | 60 | mA | VD = 12 V; Tj = 25 °C; Fig. 9 | 6 |
| On-state voltage | VT | | 1.22 | 1.5 | V | IT = 20 A; Tj = 25 °C; Fig. 10 | 6 |
| Gate trigger voltage | VGT | | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 | 6 |
| Gate trigger voltage | VGT | 0.25 | 0.4 | | V | VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11 | 6 |
| Off-state current | ID | | | 5 | μA | VD = 600 V; Tj = 25 °C | 6 |
| Off-state current | ID | | 0.4 | 2 | mA | VD = 600 V; Tj = 150 °C | 6 |
| Rate of rise of off-state voltage | dVD/dt | 500 | | | V/μs | VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 6 |
| Rate of rise of off-state voltage | dVD/dt | 400 | | | V/μs | VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 6 |
| Rate of change of commutating current | dIcom/dt | 2 | | | A/ms | VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition | 6 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 60 | | K/W | in free air | 5 |
| Isolation capacitance from cathode to external heatsink | Cisol | | 10 | | PF | from cathode to external heatsink | 5 |
## CAD (KiCad official)
- Symbol: `BTA16-600BQ`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `bta16-600bq-etched.step` / `bta16-600bq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bta16-600bq.step` / `bta16-600bq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WeEn Semiconductors datasheet](docs/bta16-600bq-datasheet.pdf) (12 pp, sha256 `a4d6e3f5a0e077fb`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bta16-600bq-datasheet.pdf)