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BTA12-600BWRG

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STMicroelectronics TRIACs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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BTA12-600BWRG

STMicroelectronics · TRIACs · ITO-220AB-3

BTA12-600BWRG from STMicroelectronics, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 (reference terminal for A2 on-state and gate polarity), carrying up to 12 A RMS on-state current (IT(RMS)) for the TO-220AB Ins. package.
2 A2 passive Main terminal A2 of the triac, rated VDRM/VRRM 600 V for BTA12-600BW and 12 A RMS on-state current at Tc = 90 °C in the TO-220AB Ins. package.
3 G input Gate trigger input, with IGT max 50 mA (quadrants I-II-III) and VGT max 1.3 V at VD = 12 V, RL = 30 Ω for the BW version.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package ITO-220AB-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 50 mA VD = 12 V, RL = 30 Ω, quadrants I - II - III 2
Gate trigger voltage VGT 1.3 V Quadrants I - II - III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C 2
Holding current IH 50 mA IT = 100 mA 2
Latching current I-III IL 70 mA IG = 1.2 x IGT, quadrants I - III 2
Latching current II IL 80 mA IG = 1.2 x IGT, quadrant II 2
Critical rate of rise of off-state voltage dV/dt 1000 V/µs VD = 67% VDRM, gate open, Tj = 125 °C 2
Critical rate of decrease of commutating current (dI/dt)c 6.5 A/ms (dV/dt)c = 0.1 V/µs, Tj = 125 °C 2
Critical rate of decrease of commutating current (dI/dt)c 2.9 A/ms (dV/dt)c = 10 V/µs, Tj = 125 °C 2
Critical rate of decrease of commutating current (dI/dt)c 12 A/ms Without snubber, Tj = 125 °C 2
On-state voltage VTM 1.55 V ITM = 17 A, tp = 380 µs, Tj = 25 °C 3
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 3
Dynamic resistance RD 35 mΩ Tj = 125 °C 3
Off-state/reverse leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 3
Off-state/reverse leakage current IDRM/IRRM 1 mA VDRM = VRRM, Tj = 125 °C 3
Junction to case thermal resistance (AC), TO-220AB insulated Rth(j-c) 2.3 °C/W TO-220AB insulated 3
Junction to ambient thermal resistance, TO-220AB insulated Rth(j-a) 60 °C/W TO-220AB / TO-220AB insulated 3
RMS on-state current IT(RMS) 12 A Full sine wave, TO-220AB Ins., Tc = 90 °C 2
Non repetitive surge peak on-state current ITSM 120 A f = 50 Hz, t = 20 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 126 A f = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C 2
I²t value for fusing I2t 78 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2

CAD (KiCad official)

  • Symbol: BTA12-600BWRG
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (16 pp, sha256 2433b4d71f8eebe8, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF