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BTA12-600B

Slkor SLKORMICRO Elec · Thyristors (SCR)/Modules · TO-220

BTA12-600B from Slkor SLKORMICRO Elec, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1) of the bidirectional triode thyristor; the datasheet gives no separate limit for this pin, and the 600 V repetitive peak off-state voltage and 12 A RMS on-state current ratings apply between T1 and T2.
2 T2 passive Main terminal 2 (T2) of the bidirectional triode thyristor; the datasheet gives no separate limit for this pin, and the 600 V repetitive peak off-state voltage and 12 A RMS on-state current ratings apply between T1 and T2.
3 Gate input Gate terminal used to trigger the device, with a peak gate current of 2.0 A, peak gate voltage of 10 V, peak gate power of 5.0 W and average gate power of 0.5 W, and a gate trigger current and voltage maximum of 30 mA and 1.5 V at VD = 6 V, RL = 10 Ω.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Off-State Voltage VDRM 600 V 1
R.M.S On-State Current IT(RMS) 12 A TC = 79 °C 1
Surge On-State Current, 50Hz ITSM 119 A One cycle, 50Hz, Peak, Non-Repetitive 1
Surge On-State Current, 60Hz ITSM 130 A One cycle, 60Hz, Peak, Non-Repetitive 1
I2t I2t 71 A2s 1
Peak Gate Power Dissipation PGM 5 W 1
Average Gate Power Dissipation PG(AV) 0.5 W 1
Peak Gate Current IGM 2 A 1
Peak Gate Voltage VGM 10 V 1
Isolation Breakdown Voltage (R.M.S.) VISO 1500 V A.C. 1 minute 1
Operating Junction Temperature TJ -40 125 °C 1
Storage Temperature TSTG -40 150 °C 1
Repetitive Peak Off-State Current IDRM 2 mA VD = VDRM, Single Phase, Half Wave, TJ = 125 °C 2
Peak On-State Voltage VTM 1.4 V IT = 20 A, Inst. Measurement 2
Gate Trigger Current, Quadrant I I+GT1 Ⅰ 30 mA VD = 6 V, RL=10 Ω 2
Gate Trigger Current, Quadrant II I-GT1 Ⅱ 30 mA VD = 6 V, RL=10 Ω 2
Gate Trigger Current, Quadrant III I-GT3 Ⅲ 30 mA VD = 6 V, RL=10 Ω 2
Gate Trigger Voltage, Quadrant I V+GT1 Ⅰ 1.5 V VD = 6 V, RL=10 Ω 2
Gate Trigger Voltage, Quadrant II V-GT1 Ⅱ 1.5 V VD = 6 V, RL=10 Ω 2
Gate Trigger Voltage, Quadrant III V-GT3 Ⅲ 1.5 V VD = 6 V, RL=10 Ω 2
Non-Trigger Gate Voltage VGD 0.2 V TJ = 125 °C, VD = 1/2 VDRM 2
Critical Rate of Rise Off-State Voltage at Commutation (dv/dt)c 10 V/㎲ TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 2
Holding Current IH 20 mA 2
Thermal Impedance Junction to Case Rth(j-c) 3.3 °C/W Junction to case 2

CAD (KiCad official)

  • Symbol: BTA12-600B
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: bta12-600b-etched.step / bta12-600b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta12-600b.step / bta12-600b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (6 pp, sha256 7b9bddfdae569df7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF