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BTA10-600CRG

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STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTA10-600CRG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

BTA10-600CRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 (reference for A2 and gate polarity), carries the on-state current up to IT(RMS) = 10 A at Tc = 95 °C for the insulated TO-220AB.
2 A2 passive Main terminal A2, rated for repetitive peak off-state voltage VDRM/VRRM of 600 V for BTA10-600CRG and carries up to 10 A RMS on-state current.
3 G input Gate trigger input referenced to A1; the C-sensitivity version needs IGT max 25 mA (quadrants I-III) and 50 mA (quadrant IV) with VGT max 1.3 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (full sine wave), TO-220AB Ins. IT(RMS) 10 A TO-220AB Ins. Tc = 95 °C 2
Non repetitive surge peak on-state current ITSM 100 A Full cycle, Tj initial = 25 °C; F = 50 Hz, tp = 20 ms 2
Non repetitive surge peak on-state current ITSM 105 A Full cycle, Tj initial = 25 °C; F = 60 Hz, tp = 16.7 ms 2
I2t value for fusing I2t 55 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns; F = 120 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 2
Dynamic resistance RD 40 mΩ Tj = 125 °C 2
On-state voltage VT 1.55 V ITM = 14 A, tp = 380 µs, Tj = 25 °C 2
Repetitive peak off-state leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 2
Repetitive peak off-state leakage current IDRM/IRRM 1 mA VDRM = VRRM, Tj = 125 °C 2
Gate trigger current (quadrants I-II-III) IGT 25 mA VD = 12 V, RL = 33 Ω; quadrants I-II-III 3
Gate trigger current (quadrant IV) IGT 50 mA VD = 12 V, RL = 33 Ω; quadrant IV 3
Gate trigger voltage VGT 1.3 V All quadrants 3
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C; quadrants I-II-III 3
Holding current IH 25 mA IT = 500 mA 3
Latching current (quadrants I-III) IL 40 mA IG = 1.2 IGT; quadrants I-III 3
Latching current (quadrant II) IL 80 mA IG = 1.2 IGT; quadrant II 3
Critical rate of rise of off-state voltage dV/dt 200 V/µs VD = 67 % VDRM, gate open, Tj = 125 °C 3
Critical rate of decrease of main current (commutation) (dV/dt)c 5 V/µs (dI/dt)c = 4.4 A/ms, Tj = 125 °C 3
Junction to case (AC), TO-220AB insulated Rth(j-c) 2.4 °C/W 4
Junction to ambient, TO-220AB / TO-220AB ins Rth(j-a) 60 °C/W 4

CAD (KiCad official)

  • Symbol: BTA10-600CRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bta10-600crg-etched.step / bta10-600crg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta10-600crg.step / bta10-600crg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (14 pp, sha256 4a5afd293e948771, retrieved 2026-10-11, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF