component
BTA10-600CRG
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bta10-600crg: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ BTA10-600CRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| RMS on-state current (full sine wave), TO-220AB Ins. | IT(RMS) | | | 10 | A | TO-220AB Ins. Tc = 95 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 100 | A | Full cycle, Tj initial = 25 °C; F = 50 Hz, tp = 20 ms | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 105 | A | Full cycle, Tj initial = 25 °C; F = 60 Hz, tp = 16.7 ms | 2 |+| I2t value for fusing | I2t | | | 55 | A2s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns; F = 120 Hz, Tj = 125 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Threshold on-state voltage | VTO | | | 0.85 | V | Tj = 125 °C | 2 |+| Dynamic resistance | RD | | | 40 | mΩ | Tj = 125 °C | 2 |+| On-state voltage | VT | | | 1.55 | V | ITM = 14 A, tp = 380 µs, Tj = 25 °C | 2 |+| Repetitive peak off-state leakage current | IDRM/IRRM | | | 5 | µA | VDRM = VRRM, Tj = 25 °C | 2 |+| Repetitive peak off-state leakage current | IDRM/IRRM | | | 1 | mA | VDRM = VRRM, Tj = 125 °C | 2 |+| Gate trigger current (quadrants I-II-III) | IGT | | | 25 | mA | VD = 12 V, RL = 33 Ω; quadrants I-II-III | 3 |+| Gate trigger current (quadrant IV) | IGT | | | 50 | mA | VD = 12 V, RL = 33 Ω; quadrant IV | 3 |+| Gate trigger voltage | VGT | | | 1.3 | V | All quadrants | 3 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C; quadrants I-II-III | 3 |+| Holding current | IH | | | 25 | mA | IT = 500 mA | 3 |+| Latching current (quadrants I-III) | IL | | | 40 | mA | IG = 1.2 IGT; quadrants I-III | 3 |+| Latching current (quadrant II) | IL | | | 80 | mA | IG = 1.2 IGT; quadrant II | 3 |+| Critical rate of rise of off-state voltage | dV/dt | 200 | | | V/µs | VD = 67 % VDRM, gate open, Tj = 125 °C | 3 |+| Critical rate of decrease of main current (commutation) | (dV/dt)c | 5 | | | V/µs | (dI/dt)c = 4.4 A/ms, Tj = 125 °C | 3 |+| Junction to case (AC), TO-220AB insulated | Rth(j-c) | | 2.4 | | °C/W | | 4 |+| Junction to ambient, TO-220AB / TO-220AB ins | Rth(j-a) | | | 60 | °C/W | | 4 |+ ## CAD (KiCad official) - Symbol: `BTA10-600CRG`
page.json+308−1@@ -151,6 +151,313 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4a5afd293e948771",+ "rows": [+ {+ "name": "RMS on-state current (full sine wave), TO-220AB Ins.",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "TO-220AB Ins. Tc = 95 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Full cycle, Tj initial = 25 °C; F = 50 Hz, tp = 20 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 105,+ "conditions": "Full cycle, Tj initial = 25 °C; F = 60 Hz, tp = 16.7 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2s",+ "min": null,+ "typ": null,+ "max": 55,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns; F = 120 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Threshold on-state voltage",+ "symbol": "VTO",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "RD",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM = 14 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDRM = VRRM, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (quadrants I-II-III)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VD = 12 V, RL = 33 Ω; quadrants I-II-III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (quadrant IV)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VD = 12 V, RL = 33 Ω; quadrant IV",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "All quadrants",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C; quadrants I-II-III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "IT = 500 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Latching current (quadrants I-III)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "IG = 1.2 IGT; quadrants I-III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Latching current (quadrant II)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "IG = 1.2 IGT; quadrant II",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 200,+ "typ": null,+ "max": null,+ "conditions": "VD = 67 % VDRM, gate open, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of main current (commutation)",+ "symbol": "(dV/dt)c",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "(dI/dt)c = 4.4 A/ms, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to case (AC), TO-220AB insulated",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient, TO-220AB / TO-220AB ins",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +499,4 @@ "visibility": { "public": true }-}+}