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Contents

README

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BTA08-600SWRG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

BTA08-600SWRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (MT1/A1), one of the two power (load-current) terminals of the triac and the reference point to which gate trigger voltage VGT and current IGT are specified.
2 A2 passive Main terminal 2 (MT2/A2), the second power (load-current) terminal, internally connected to the package mounting tab; for this BTA08 (Ins.) TO-220AB Ins. variant the tab is electrically isolated and rated at 2500 VRMS insulation, with Rth(j-c) = 2.5 degC/W.
3 G input Gate control terminal; applying a gate current IGT referenced to A1 (5 mA min for the SW logic-level sensitivity of this part, VGT max 1.2 V) triggers the triac into conduction.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger voltage (VGD), quadrants I-II-III VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C 2
Gate trigger current (SW column, 10 mA) IGT 10 mA VD = 12 V, RL = 30 Ω, quadrants I-II-III 2
Gate trigger voltage VGT 1.2 V Quadrants I-II-III 2
Holding current (SW column) IH 15 mA IT = 100 mA 2
Latching current (SW column), quadrants I and III IL 25 mA Quadrants I - III; IG = 1.2 x IGT 2
Latching current (SW column), quadrant II IL 30 mA Quadrant II; IG = 1.2 x IGT 2
Critical rate of rise of off-state voltage (SW column) dV/dt 40 V/µs VD = 67% VDRM, gate open, Tj = 125 °C 2
On-state voltage VTM 1.55 V ITM = 11 A, tp = 380 µs, Tj = 25 °C 3
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 3
Dynamic resistance RD 50 mΩ Tj = 125 °C 3
Off-state and reverse leakage current IDRM / IRRM 5 µA VDRM = VRRM, Tj = 25 °C 3
Off-state and reverse leakage current IDRM / IRRM 1 mA VDRM = VRRM, Tj = 125 °C 3
RMS on-state current (TO-220AB Ins.) IT(RMS) 8 A Tc = 100 °C, full sine wave, TO-220AB Ins. 2
Non repetitive surge peak on-state current ITSM 80 A f = 50 Hz, t = 20 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 84 A f = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C 2
I2t value for fusing I2t 36 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Max. junction to case thermal resistance (AC) Rth(j-c) 2.5 °C/W AC, TO-220AB Insulated 3
Junction to ambient thermal resistance Rth(j-a) 60 °C/W TO-220AB Insulated 3

CAD (KiCad official)

  • Symbol: BTA08-600SWRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bta08-600swrg-etched.step / bta08-600swrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta08-600swrg.step / bta08-600swrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 a75018e9bb145502, retrieved 2026-09-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-5 (text+vision), consensus claude-opus-4-8 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF