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BTA08-600CWRG

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STMicroelectronics TRIACs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTA08-600CWRG

STMicroelectronics · TRIACs · TO-220AB

BTA08-600CWRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1, the reference terminal for the gate, carrying the 8 A rms on-state current (IT(RMS) 8 A, Tc = 100 °C for the insulated TO-220AB).
2 A2 passive Main terminal A2, which blocks VDRM/VRRM of 600 V for the 600 V grade. The package's insulated tab, rated 2500 VRMS, is also labelled A2 on the drawing.
3 G input Gate trigger input. For the CW version, IGT is 35 mA max in quadrants I-II-III at VD = 12 V, RL = 30 Ω, and VGT is 1.3 V max.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Triggering gate current IGT 35 mA VD = 12 V RL = 30 Ω, Quadrants I - II - III 2
Gate trigger voltage VGT 1.3 V VD = 12 V RL = 30 Ω, Quadrants I - II - III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM RL = 3.3 kΩ Tj = 125 °C, Quadrants I - II - III 2
Holding current IH 35 mA IT = 100 mA 2
Latching current, quadrants I - III IL 50 mA IG = 1.2 IGT, I - III 2
Latching current, quadrant II IL 60 mA IG = 1.2 IGT, II 2
Critical rate of rise of off-state voltage dV/dt 400 V/µs VD = 67% VDRM gate open Tj = 125 °C 2
Critical rate of decrease of commutating current (dI/dt)c 4.5 A/ms Without snubber Tj = 125 °C 2
On-state voltage VTM 1.55 V ITM = 11 A, tp = 380 µs Tj = 25 °C 3
Threshold voltage Vt0 0.85 V Tj = 125 °C 3
Dynamic resistance Rd 50 mΩ Tj = 125 °C 3
Off-state/reverse leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 3
Off-state/reverse leakage current IDRM/IRRM 1 mA VDRM = VRRM, Tj = 125 °C 3
On-state rms current (full sine wave) IT(rms) 8 A TO-220AB Ins., Tc = 100 °C 2
Non repetitive surge peak on-state current ITSM 80 A F = 50 Hz t = 20 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 84 A F = 60 Hz t = 16.7 ms, Tj initial = 25 °C 2
I²t value for fusing I²t 36 A²s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 150 °C 2
Junction to case (AC) Rth(j-c) 2.5 °C/W TO-220AB Insulated 3
Junction to ambient Rth(j-a) 60 °C/W TO-220AB / TO-220AB Insulated 3

CAD (KiCad official)

  • Symbol: BTA08-600CWRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bta08-600cwrg-etched.step / bta08-600cwrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta08-600cwrg.step / bta08-600cwrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 3c944364f11b842e, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF