component
BT151D-800
Public Made by Adomby adom
YFW Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BT151D-800
YFW · Thyristors (SCR)/Modules · TO-252
BT151D-800 from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode (K) of the SCR, the return terminal for the up-to-12 A RMS on-state current (IT(RMS) 12 A). |
| 2 | A | passive | Anode (A2 in the circuit diagram) of the SCR, which blocks repetitive off-state and reverse voltages of 600/800 V (VDRM/VRRM). |
| 3 | G | input | Gate trigger input of the SCR, with gate trigger current IGT max 10 mA and gate trigger voltage VGT max 1.3 V (VD=12 V, RL=140 Ω), and peak gate current IGM 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 800 | V | 1 | |||
| Repetitive peak reverse voltage | VRRM | 800 | V | 1 | |||
| RMS on-state current | IT(RMS) | 12 | A | 1 | |||
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 95 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 45 | A2s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dIT/dt | 50 | A/μs | IG=2×IGT | 1 | ||
| Peak gate current | IGM | 4 | A | 1 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 1 | |||
| Junction temperature | TJ | -40 | 125 | °C | 1 | ||
| Storage temperature | TSTG | -40 | 150 | °C | 1 | ||
| Gate trigger current | IGT | 10 | mA | VD=12V RL=140Ω | 2 | ||
| Gate trigger voltage | VGT | 1.3 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM Tj=125°C | 2 | ||
| Latching current | IL | 50 | mA | IG=1.2IGT | 2 | ||
| Holding current | IH | 40 | mA | IT=50mA | 2 | ||
| Critical-rate of rise of commutation voltage | dVD/dt | 200 | V/μs | VD=2/3VDRM Gate Open Tj=125°C | 2 | ||
| Forward on voltage | VTM | 1.55 | V | ITM=16A tp=380μs | 2 | ||
| Repetitive peak off-state current | IDRM | 5 | μA | VD=VDRM VR=VRRM Tj=25°C | 2 | ||
| Repetitive peak reverse current | IRRM | 2 | mA | Tj=125°C | 2 | ||
| Thermal resistance junction to case | Rth(j-c) | 1.3 | °C/W | Junction to case | 2 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 70 | °C/W | Junction to ambient | 2 |
CAD (KiCad official)
- Symbol:
BT151D-800 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
bt151d-800-etched.step/bt151d-800-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bt151d-800.step/bt151d-800.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (4 pp, sha256
f908cc627b726b0c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BT151D-800
**YFW** · Thyristors (SCR)/Modules · TO-252
BT151D-800 from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode (K) of the SCR, the return terminal for the up-to-12 A RMS on-state current (IT(RMS) 12 A). |
| 2 | A | passive | Anode (A2 in the circuit diagram) of the SCR, which blocks repetitive off-state and reverse voltages of 600/800 V (VDRM/VRRM). |
| 3 | G | input | Gate trigger input of the SCR, with gate trigger current IGT max 10 mA and gate trigger voltage VGT max 1.3 V (VD=12 V, RL=140 Ω), and peak gate current IGM 4 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | | | 800 | V | | 1 |
| Repetitive peak reverse voltage | VRRM | | | 800 | V | | 1 |
| RMS on-state current | IT(RMS) | | | 12 | A | | 1 |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | | | 95 | A | full cycle, F=50Hz | 1 |
| I2t value for fusing | I2t | | | 45 | A2s | tp=10ms | 1 |
| Critical rate of rise of on-state current | dIT/dt | | | 50 | A/μs | IG=2×IGT | 1 |
| Peak gate current | IGM | | | 4 | A | | 1 |
| Average gate power dissipation | PG(AV) | | | 1 | W | | 1 |
| Junction temperature | TJ | -40 | | 125 | °C | | 1 |
| Storage temperature | TSTG | -40 | | 150 | °C | | 1 |
| Gate trigger current | IGT | | | 10 | mA | VD=12V RL=140Ω | 2 |
| Gate trigger voltage | VGT | | | 1.3 | V | | 2 |
| Gate non-trigger voltage | VGD | 0.2 | | | V | VD=VDRM Tj=125°C | 2 |
| Latching current | IL | | | 50 | mA | IG=1.2IGT | 2 |
| Holding current | IH | | | 40 | mA | IT=50mA | 2 |
| Critical-rate of rise of commutation voltage | dVD/dt | 200 | | | V/μs | VD=2/3VDRM Gate Open Tj=125°C | 2 |
| Forward on voltage | VTM | | | 1.55 | V | ITM=16A tp=380μs | 2 |
| Repetitive peak off-state current | IDRM | | | 5 | μA | VD=VDRM VR=VRRM Tj=25°C | 2 |
| Repetitive peak reverse current | IRRM | | | 2 | mA | Tj=125°C | 2 |
| Thermal resistance junction to case | Rth(j-c) | | 1.3 | | °C/W | Junction to case | 2 |
| Thermal resistance junction to ambient | Rth(j-a) | | 70 | | °C/W | Junction to ambient | 2 |
## CAD (KiCad official)
- Symbol: `BT151D-800`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `bt151d-800-etched.step` / `bt151d-800-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bt151d-800.step` / `bt151d-800.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603393352926703616) (4 pp, sha256 `f908cc627b726b0c`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bt151d-800-datasheet.pdf)