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BT138S-600E

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MSKSEMI Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT138S-600E

MSKSEMI · Thyristors (SCR)/Modules · TO-252

BT138S-600E from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (MT1) of the triac; the datasheet's absolute maximum ratings for this device are VDRM/VRRM 600 V (BT138S-600E) and IT(RMS) 12 A at TC=95℃, which apply between T1 and T2.
2 T2 passive Main terminal 2 (MT2) of the triac; the datasheet's absolute maximum ratings for this device are VDRM/VRRM 600 V (BT138S-600E) and IT(RMS) 12 A at TC=95℃, which apply between T1 and T2.
3 G input Gate terminal; limits stated are peak gate current IGM 2 A, average gate power PG(AV) 0.5 W, peak gate power PGM 5 W, and gate trigger current IGT max 10 mA (Quadrants I-II-III) / 25 mA (Quadrant IV) with VGT max 1.5 V.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage junction temperature range Tstg -40 150 ℃ 2
Operating junction temperature range Tj -40 125 ℃ 2
Repetitive peak off-state voltage VDRM 600 V Tj=25℃ 2
Repetitive peak reverse voltage VRRM 600 V Tj=25℃ 2
RMS on-state current IT(RMS) 12 A TC=95℃ 2
Non repetitive surge peak on-state current ITSM 95 A full cycle, F=50Hz 2
I2t value for fusing I2t 45 A2s tp=10ms 2
Critical rate of rise of on-state current, quadrant I-II-III dI/dt 50 A/μs IG=2×IGT 2
Critical rate of rise of on-state current, quadrant IV dI/dt 10 A/μs IG=2×IGT 2
Peak gate current IGM 2 A 2
Average gate power dissipation PG(AV) 0.5 W 2
Peak gate power PGM 5 W 2
Gate trigger current, quadrant I-II-III IGT 10 mA VD=12V RL=33Ω 3
Gate trigger current, quadrant IV IGT 25 mA VD=12V RL=33Ω 3
Gate trigger voltage, all quadrants VGT 1.5 V 3
Gate non-trigger voltage, all quadrants VGD 0.2 V VD=VDRM Tj=125℃ RL=3.3KΩ 3
Latching current, quadrant I-III IL 30 mA IG=1.2IGT 3
Latching current, quadrant II-IV IL 40 mA IG=1.2IGT 3
Holding current IH 25 mA IT=100mA 3
Critical rate of rise of off-state voltage dV/dt 50 V/μs VD=2/3VDRM Gate Open Tj=125℃ 3
On-state voltage VTM 1.6 V ITM=15A tp=380μs Tj=25℃ 3
Repetitive peak off-state current IDRM 5 μA VD=VDRM VR=VRRM Tj=25℃ 3
Repetitive peak reverse current IRRM 1 mA VD=VDRM VR=VRRM Tj=125℃ 3
Thermal resistance junction to case (AC) Rth(j-c) 1.7 ℃/W 3
Thermal resistance junction to ambient Rth(j-a) 70 ℃/W 3

CAD (KiCad official)

  • Symbol: BT138S-600E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: bt138s-600e-etched.step / bt138s-600e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt138s-600e.step / bt138s-600e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 d3a4575decdc37af, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF