component
BT137S-600E
Public Made by Adomby adom
KTP Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BT137S-600E
KTP · Thyristors (SCR)/Modules · TO-252
BT137S-600E from KTP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac (MT1), the current return terminal; the datasheet rates the device for 8 A RMS on-state current and 600 V VDRM/VRRM. |
| 2 | T2 | passive | Main terminal T2 of the triac (MT2), connected to the tab; the datasheet rates the device for 8 A RMS on-state current at TC≤68℃ and 600 V VDRM/VRRM. |
| 3 | G | input | Gate trigger terminal, with maximum IGT of 10 mA (quadrants I-III) and 25 mA (quadrant IV) and maximum VGT of 1 V at VD=12 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KTP |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage | VDRM | 600 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage | VRRM | 600 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 8 | A | TC≤68℃ | 1 | ||
| Non repetitive surge peak on-state current | ITSM | 65 | A | full cycle, tp=20ms, Tj=25℃ | 1 | ||
| Non repetitive surge peak on-state current | ITSM | 72 | A | full cycle, tp=16.6ms, Tj=25℃ | 1 | ||
| I2t value for fusing | I2t | 21 | A2s | tp=10ms, Tj=25℃ | 1 | ||
| Critical rate of rise of on-state current (Ⅰ-Ⅱ-Ⅲ) | dI/dt | 80 | A/μs | IG=2×IGT, f=100Hz, Tj=125℃ | 1 | ||
| Critical rate of rise of on-state current (Ⅳ) | dI/dt | 40 | A/μs | IG=2×IGT, f=100Hz, Tj=125℃ | 1 | ||
| Peak gate current | IGM | 4 | A | tp=20μs, Tj=125℃ | 1 | ||
| Average gate power dissipation | PG(AV) | 0.5 | W | Tj=125℃ | 1 | ||
| Peak gate power | PGM | 10 | W | 1 | |||
| Peak pulse voltage | Vpp | 4 | kV | Tj=25℃; non-repetitive, off-state; FIG.8 | 1 | ||
| Gate trigger current (Ⅰ-Ⅱ-Ⅲ) | IGT | 10 | mA | VD=12V RL=33Ω | 2 | ||
| Gate trigger current (Ⅳ) | IGT | 25 | mA | VD=12V RL=33Ω | 2 | ||
| Gate trigger voltage (ALL) | VGT | 1 | V | 2 | |||
| Gate non-trigger voltage (ALL) | VGD | 0.2 | V | VD=VDRM Tj=125℃ RL=3.3KΩ | 2 | ||
| Latching current (Ⅰ-Ⅲ-Ⅳ) | IL | 20 | mA | IG=1.2IGT | 2 | ||
| Latching current (Ⅱ) | IL | 35 | mA | IG=1.2IGT | 2 | ||
| Holding current | IH | 20 | mA | IT=500mA | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 250 | V/μs | VD=400V Gate Open Tj=125℃ | 2 | ||
| Critical rate of rise of commutating voltage | (dV/dt)c | 5 | V/μs | (dI/dt)c=2.7A/ms, Tj=125℃ | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=10A tp=380μs Tj=25℃ | 2 | ||
| Threshold voltage | VTO | 0.8 | V | Tj=125℃ | 2 | ||
| Dynamic resistance | RD | 53 | mΩ | Tj=125℃ | 2 | ||
| Repetitive peak off-state current | IDRM | 5 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 | ||
| Repetitive peak reverse current | IRRM | 0.35 | mA | Tj=125℃ | 2 | ||
| Gate-controlled turn-on time | ton | 1.5 | μs | IG=40mA IA=200mA IR=20mA Tj=25℃ | 2 | ||
| Turn-off time | toff | 15 | μs | IG=40mA IA=200mA IR=20mA Tj=25℃ | 2 | ||
| Junction to case thermal resistance (AC) | Rth(j-c) | 5 | ℃/W | junction to case (AC) | 2 | ||
| Junction to ambient thermal resistance (AC) | Rth(j-a) | 130 | ℃/W | junction to ambient (AC) | 2 |
CAD (KiCad official)
- Symbol:
BT137S-600E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
bt137s-600e-etched.step/bt137s-600e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bt137s-600e.step/bt137s-600e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KTP datasheet (7 pp, sha256
d985ed519844df98, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BT137S-600E
**KTP** · Thyristors (SCR)/Modules · TO-252
BT137S-600E from KTP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac (MT1), the current return terminal; the datasheet rates the device for 8 A RMS on-state current and 600 V VDRM/VRRM. |
| 2 | T2 | passive | Main terminal T2 of the triac (MT2), connected to the tab; the datasheet rates the device for 8 A RMS on-state current at TC≤68℃ and 600 V VDRM/VRRM. |
| 3 | G | input | Gate trigger terminal, with maximum IGT of 10 mA (quadrants I-III) and 25 mA (quadrant IV) and maximum VGT of 1 V at VD=12 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KTP |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage junction temperature range | Tstg | -40 | | 150 | ℃ | | 1 |
| Operating junction temperature range | Tj | -40 | | 125 | ℃ | | 1 |
| Repetitive peak off-state voltage | VDRM | | | 600 | V | Tj=25℃ | 1 |
| Repetitive peak reverse voltage | VRRM | | | 600 | V | Tj=25℃ | 1 |
| RMS on-state current | IT(RMS) | | | 8 | A | TC≤68℃ | 1 |
| Non repetitive surge peak on-state current | ITSM | | | 65 | A | full cycle, tp=20ms, Tj=25℃ | 1 |
| Non repetitive surge peak on-state current | ITSM | | | 72 | A | full cycle, tp=16.6ms, Tj=25℃ | 1 |
| I2t value for fusing | I2t | | | 21 | A2s | tp=10ms, Tj=25℃ | 1 |
| Critical rate of rise of on-state current (Ⅰ-Ⅱ-Ⅲ) | dI/dt | | | 80 | A/μs | IG=2×IGT, f=100Hz, Tj=125℃ | 1 |
| Critical rate of rise of on-state current (Ⅳ) | dI/dt | | | 40 | A/μs | IG=2×IGT, f=100Hz, Tj=125℃ | 1 |
| Peak gate current | IGM | | | 4 | A | tp=20μs, Tj=125℃ | 1 |
| Average gate power dissipation | PG(AV) | | | 0.5 | W | Tj=125℃ | 1 |
| Peak gate power | PGM | | | 10 | W | | 1 |
| Peak pulse voltage | Vpp | | | 4 | kV | Tj=25℃; non-repetitive, off-state; FIG.8 | 1 |
| Gate trigger current (Ⅰ-Ⅱ-Ⅲ) | IGT | | | 10 | mA | VD=12V RL=33Ω | 2 |
| Gate trigger current (Ⅳ) | IGT | | | 25 | mA | VD=12V RL=33Ω | 2 |
| Gate trigger voltage (ALL) | VGT | | | 1 | V | | 2 |
| Gate non-trigger voltage (ALL) | VGD | 0.2 | | | V | VD=VDRM Tj=125℃ RL=3.3KΩ | 2 |
| Latching current (Ⅰ-Ⅲ-Ⅳ) | IL | | | 20 | mA | IG=1.2IGT | 2 |
| Latching current (Ⅱ) | IL | | | 35 | mA | IG=1.2IGT | 2 |
| Holding current | IH | | | 20 | mA | IT=500mA | 2 |
| Critical rate of rise of off-state voltage | dV/dt | 250 | | | V/μs | VD=400V Gate Open Tj=125℃ | 2 |
| Critical rate of rise of commutating voltage | (dV/dt)c | 5 | | | V/μs | (dI/dt)c=2.7A/ms, Tj=125℃ | 2 |
| On-state voltage | VTM | | | 1.5 | V | ITM=10A tp=380μs Tj=25℃ | 2 |
| Threshold voltage | VTO | | | 0.8 | V | Tj=125℃ | 2 |
| Dynamic resistance | RD | | | 53 | mΩ | Tj=125℃ | 2 |
| Repetitive peak off-state current | IDRM | | | 5 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 |
| Repetitive peak reverse current | IRRM | | | 0.35 | mA | Tj=125℃ | 2 |
| Gate-controlled turn-on time | ton | | 1.5 | | μs | IG=40mA IA=200mA IR=20mA Tj=25℃ | 2 |
| Turn-off time | toff | | 15 | | μs | IG=40mA IA=200mA IR=20mA Tj=25℃ | 2 |
| Junction to case thermal resistance (AC) | Rth(j-c) | | 5 | | ℃/W | junction to case (AC) | 2 |
| Junction to ambient thermal resistance (AC) | Rth(j-a) | | 130 | | ℃/W | junction to ambient (AC) | 2 |
## CAD (KiCad official)
- Symbol: `BT137S-600E`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `bt137s-600e-etched.step` / `bt137s-600e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bt137s-600e.step` / `bt137s-600e.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KTP datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590907539138179072) (7 pp, sha256 `d985ed519844df98`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bt137s-600e-datasheet.pdf)