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BT137-800E

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WEIDA Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT137-800E

WEIDA · Thyristors (SCR)/Modules · TO-252

BT137-800E from WEIDA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac (symbol T1(1)), the reference terminal for gate triggering, rated IT(RMS) 8 A and VDRM/VRRM 800 V for the -800 grade.
2 T2 passive Main terminal T2 of the triac (symbol T2(2)), carrying up to 8 A RMS on-state current with 800 V repetitive peak off-state/reverse voltage for the -800 grade.
3 G input Gate trigger input (symbol G(3)); E grade needs IGT up to 10 mA in quadrants I-II-III and 25 mA in quadrant IV at VD=12 V, with VGT max 1.3 V and peak gate current IGM 2 A.

Key specifications

Parameter Value
Manufacturer WEIDA
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current, quadrants Ⅰ-Ⅱ-Ⅲ (E grade) IGT 10 mA VD=12V, RL=33Ω, Quadrant Ⅰ-Ⅱ-Ⅲ 2
Gate trigger current, quadrant Ⅳ (E grade) IGT 25 mA VD=12V, RL=33Ω, Quadrant Ⅳ 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ, Quadrant Ⅰ-Ⅱ-Ⅲ-Ⅳ 2
Holding current IH 20 mA IT=100mA 2
Latching current, quadrants Ⅰ-Ⅲ-Ⅳ IL 30 mA IG=1.2IGT, Quadrant Ⅰ-Ⅲ-Ⅳ 2
Latching current, quadrant Ⅱ IL 40 mA IG=1.2IGT, Quadrant Ⅱ 2
Critical rate of rise of off-state voltage (E grade) dV/dt 50 V/µs VD=0.66×VDRM, Tj=125℃, Gate open 2
On-state voltage VTM 1.6 V ITM=10A, tp=380μs, Tj=25℃ 2
Repetitive peak off-state current IDRM/IRRM 5 µA VDRM=VRRM, Tj=25℃ 2
Repetitive peak off-state current IDRM/IRRM 0.5 mA VDRM=VRRM, Tj=125℃ 2
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage (800V variant) VDRM 800 V Tj=25℃ 1
Repetitive peak reverse voltage (800V variant) VRRM 800 V Tj=25℃ 1
RMS on-state current IT(RMS) 8 A 1
Non repetitive surge peak on-state current ITSM 65 A full cycle, F=50Hz 1
I2t value for fusing I2t 21 A2s tp=10ms 1
Critical rate of rise of on-state current, quadrants Ⅰ-Ⅱ-Ⅲ dI/dt 50 A/μs IG=2×IGT, Quadrant Ⅰ-Ⅱ-Ⅲ 2
Critical rate of rise of on-state current, quadrant Ⅳ dI/dt 10 A/μs IG=2×IGT, Quadrant Ⅳ 2
Peak gate current IGM 2 A 2
Average gate power dissipation PG(AV) 0.5 W 2
Peak gate power PGM 5 W 2
Junction to case thermal resistance (AC), TO-252-4R Rth(j-c) 2 ℃/W junction to case (AC) 3

CAD (KiCad official)

  • Symbol: BT137-800E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: bt137-800e-etched.step / bt137-800e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt137-800e.step / bt137-800e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (8 pp, sha256 9460c02a1dda9654, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF