component
BT137-600E
Public Made by Adomby adom
WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
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| bt137-600e-etched.glb | 8d ago |
| bt137-600e-etched.step | 8d ago |
| bt137-600e-hero.glb | 8d ago |
| bt137-600e-hero.overlay.json | 8d ago |
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| README.md | 8d ago |
BT137-600E
WeEn Semiconductors · Thyristors (SCR)/Modules · TO-220AB
BT137-600E from WeEn Semiconductors, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the 4Q triac; the datasheet references the four trigger quadrants to T2 and G. |
| 2 | T2 | passive | Main terminal 2 of the triac; the datasheet uses T2 as the reference for the gate trigger quadrants. |
| 3 | G | input | Gate, used to trigger the triac; the sensitive gate is intended for direct interfacing with microcontrollers, logic ICs and other low power gate trigger circuits. |
| mb | T2 | passive | Mounting base, internally connected to main terminal 2 (T2) and used as the heatsink-mounted tab. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 600 | V | 3 | |||
| RMS on-state current | IT(RMS) | 8 | A | full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 | 3 | ||
| Non-repetitive peak on-state current | ITSM | 65 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 | 3 | ||
| Non-repetitive peak on-state current | ITSM | 71 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 3 | ||
| I2t for fusing | I2t | 21 | A2s | tp = 10 ms; SIN | 3 | ||
| Rate of rise of on-state current | dIT/dt | 50 | A/µs | IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G+ | 3 | ||
| Rate of rise of on-state current | dIT/dt | 10 | A/µs | IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ | 3 | ||
| Peak gate current | IGM | 2 | A | 3 | |||
| Peak gate power | PGM | 5 | W | 3 | |||
| Average gate power | PG(AV) | 0.5 | W | over any 20 ms period | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Junction temperature | Tj | 125 | °C | 3 | |||
| Thermal resistance from junction to mounting base | Rth(j-mb) | 2.4 | K/W | half cycle; Fig. 6 | 6 | ||
| Thermal resistance from junction to mounting base | Rth(j-mb) | 2 | K/W | full cycle; Fig. 6 | 6 | ||
| Gate trigger current, T2+ G+ | IGT | 2.5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 | 7 | |
| Gate trigger current, T2+ G- | IGT | 4 | 10 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 | 7 | |
| Gate trigger current, T2- G- | IGT | 5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 | 7 | |
| Gate trigger current, T2- G+ | IGT | 11 | 25 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 | 7 | |
| Latching current, T2+ G+ | IL | 3 | 25 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 | 7 | |
| Latching current, T2+ G- | IL | 14 | 35 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 | 7 | |
| Latching current, T2- G- | IL | 3 | 25 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 | 7 | |
| Latching current, T2- G+ | IL | 4 | 35 | mA | VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 | 7 | |
| Holding current | IH | 2.5 | 20 | mA | VD = 12 V; Tj = 25 °C; Fig. 9 | 7 | |
| On-state voltage | VT | 1.3 | 1.65 | V | IT = 10 A; Tj = 25 °C; Fig. 10 | 7 | |
| Gate trigger voltage | VGT | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 | 7 | |
| Gate trigger voltage | VGT | 0.25 | 0.4 | V | VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 | 7 | |
| Off-state current | ID | 0.1 | 0.5 | mA | VD = 600 V; Tj = 125 °C | 7 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 60 | K/W | in free air | 6 | ||
| Rate of rise of off-state voltage | dVD/dt | 50 | V/µs | VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 7 | ||
| Gate-controlled turn-on time | tgt | 2 | µs | ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/dt = 5 A/µs | 7 |
CAD (KiCad official)
- Symbol:
BT137-600E - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
bt137-600e-etched.step/bt137-600e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bt137-600e.step/bt137-600e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (13 pp, sha256
287bbde2c83c7c62, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).