BT137-600E

@@ -8,9 +8,10 @@ BT137-600E from WeEn Semiconductors, in a TO-220AB. Pinout and pin descriptions  | Pin | Name | Type | Function | |---|---|---|---|-| 1 | MT1 | bidirectional | Main Terminal 1 (T1); one of the two bidirectional AC power terminals; IT(RMS) = 8 A, non-repetitive surge ITSM = 65 A (full cycle, F = 50 Hz), I²t = 21 A²s (tp = 10 ms). |-| 2 | MT2 | bidirectional | Main Terminal 2 (T2); second bidirectional AC power terminal; also the exposed heatsink tab in TO-252-4R; IT(RMS) = 8 A, VTM ≤ 1.6 V at ITM = 10 A (tp = 380 µs, Tj = 25 °C); Rth(j-c) = 2.0 °C/W. |-| 3 | G | input | Gate trigger input; IGT max 5-100 mA depending on sensitivity grade (D-G) and quadrant; VGT max 1.3 V (Quadrants I-II-III-IV, Tj = 25 °C); IGM max 2 A peak, PGM max 5 W peak, PG(AV) max 0.5 W. |+| 1 | T1 | passive | Main terminal 1 of the 4Q triac; the datasheet references the four trigger quadrants to T2 and G. |+| 2 | T2 | passive | Main terminal 2 of the triac; the datasheet uses T2 as the reference for the gate trigger quadrants. |+| 3 | G | input | Gate, used to trigger the triac; the sensitive gate is intended for direct interfacing with microcontrollers, logic ICs and other low power gate trigger circuits. |+| mb | T2 | passive | Mounting base, internally connected to main terminal 2 (T2) and used as the heatsink-mounted tab. |  ## Key specifications @@ -27,29 +28,36 @@ Limits as printed in the datasheet (page.json `metadata.characteristics` carries  | Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page | |---|---|---|---|---|---|---|---|-| Storage junction temperature range | Tstg | -40 |  | 150 | ℃ |  | 1 |-| Operating junction temperature range | Tj | -40 |  | 125 | ℃ |  | 1 |-| Repetitive peak off-state voltage (600V variant) | VDRM |  |  | 600 | V | Tj=25℃ | 1 |-| Repetitive peak reverse voltage (600V variant) | VRRM |  |  | 600 | V | Tj=25℃ | 1 |-| RMS on-state current | IT(RMS) |  |  | 8 | A |  | 1 |-| Non repetitive surge peak on-state current | ITSM |  |  | 65 | A | full cycle, F=50Hz | 1 |-| I2t value for fusing | I2t |  |  | 21 | A2s | tp=10ms | 1 |-| Critical rate of rise of on-state current, Ⅰ-Ⅱ-Ⅲ | dI/dt |  |  | 50 | A/μs | IG=2×IGT, Ⅰ-Ⅱ-Ⅲ | 2 |-| Critical rate of rise of on-state current, Ⅳ | dI/dt |  |  | 10 | A/μs | IG=2×IGT, Ⅳ | 2 |-| Peak gate current | IGM |  |  | 2 | A |  | 2 |-| Average gate power dissipation | PG(AV) |  |  | 0.5 | W |  | 2 |-| Peak gate power | PGM |  |  | 5 | W |  | 2 |-| Gate trigger current, quadrants Ⅰ-Ⅱ-Ⅲ (grade E) | IGT |  |  | 10 | mA | VD=12V, RL=33Ω, Ⅰ-Ⅱ-Ⅲ | 2 |-| Gate trigger current, quadrant Ⅳ (grade E) | IGT |  |  | 25 | mA | VD=12V, RL=33Ω, Ⅳ | 2 |-| Gate non-trigger voltage (grade-independent) | VGD | 0.2 |  |  | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, Ⅰ-Ⅱ-Ⅲ-Ⅳ | 2 |-| Holding current (grade E) | IH |  |  | 20 | mA | IT=100mA | 2 |-| Latching current, quadrants Ⅰ-Ⅲ-Ⅳ (grade E) | IL |  |  | 30 | mA | IG=1.2IGT, Ⅰ-Ⅲ-Ⅳ | 2 |-| Latching current, quadrant Ⅱ (grade E) | IL |  |  | 40 | mA | IG=1.2IGT, Ⅱ | 2 |-| Critical rate of rise of off-state voltage (grade E) | dV/dt | 50 |  |  | V/µs | VD=0.66×VDRM, Tj=125℃, gate open | 2 |-| On-state voltage | VTM |  |  | 1.6 | V | ITM=10A, tp=380μs, Tj=25℃ | 2 |-| Repetitive peak off-state / reverse current | IDRM/IRRM |  |  | 5 | µA | VDRM=VRRM, Tj=25℃ | 2 |-| Repetitive peak off-state / reverse current | IDRM/IRRM |  |  | 0.5 | mA | VDRM=VRRM, Tj=125℃ | 2 |-| Thermal resistance junction to case (AC), TO-220B (Non-Ins) / TO-220C | Rth(j-c) |  | 1.8 |  | ℃/W | junction to case (AC), TO-220B(Non-Ins)/TO-220C | 3 |+| Repetitive peak off-state voltage | VDRM |  |  | 600 | V |  | 3 |+| RMS on-state current | IT(RMS) |  |  | 8 | A | full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 | 3 |+| Non-repetitive peak on-state current | ITSM |  |  | 65 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 | 3 |+| Non-repetitive peak on-state current | ITSM |  |  | 71 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 3 |+| I2t for fusing | I2t |  |  | 21 | A2s | tp = 10 ms; SIN | 3 |+| Rate of rise of on-state current | dIT/dt |  |  | 50 | A/µs | IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G+ | 3 |+| Rate of rise of on-state current | dIT/dt |  |  | 10 | A/µs | IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ | 3 |+| Peak gate current | IGM |  |  | 2 | A |  | 3 |+| Peak gate power | PGM |  |  | 5 | W |  | 3 |+| Average gate power | PG(AV) |  |  | 0.5 | W | over any 20 ms period | 3 |+| Storage temperature | Tstg | -40 |  | 150 | °C |  | 3 |+| Junction temperature | Tj |  |  | 125 | °C |  | 3 |+| Thermal resistance from junction to mounting base | Rth(j-mb) |  |  | 2.4 | K/W | half cycle; Fig. 6 | 6 |+| Thermal resistance from junction to mounting base | Rth(j-mb) |  |  | 2 | K/W | full cycle; Fig. 6 | 6 |+| Gate trigger current, T2+ G+ | IGT |  | 2.5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 | 7 |+| Gate trigger current, T2+ G- | IGT |  | 4 | 10 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 | 7 |+| Gate trigger current, T2- G- | IGT |  | 5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 | 7 |+| Gate trigger current, T2- G+ | IGT |  | 11 | 25 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 | 7 |+| Latching current, T2+ G+ | IL |  | 3 | 25 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 | 7 |+| Latching current, T2+ G- | IL |  | 14 | 35 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 | 7 |+| Latching current, T2- G- | IL |  | 3 | 25 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 | 7 |+| Latching current, T2- G+ | IL |  | 4 | 35 | mA | VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 | 7 |+| Holding current | IH |  | 2.5 | 20 | mA | VD = 12 V; Tj = 25 °C; Fig. 9 | 7 |+| On-state voltage | VT |  | 1.3 | 1.65 | V | IT = 10 A; Tj = 25 °C; Fig. 10 | 7 |+| Gate trigger voltage | VGT |  | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 | 7 |+| Gate trigger voltage | VGT | 0.25 | 0.4 |  | V | VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 | 7 |+| Off-state current | ID |  | 0.1 | 0.5 | mA | VD = 600 V; Tj = 125 °C | 7 |+| Thermal resistance from junction to ambient | Rth(j-a) |  | 60 |  | K/W | in free air | 6 |+| Rate of rise of off-state voltage | dVD/dt |  | 50 |  | V/µs | VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 7 |+| Gate-controlled turn-on time | tgt |  | 2 |  | µs | ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/dt = 5 A/µs | 7 |  ## CAD (KiCad official) @@ -62,7 +70,7 @@ Limits as printed in the datasheet (page.json `metadata.characteristics` carries  Data extracted from the manufacturer datasheet, not a distributor listing: -- **Datasheet:** [WeEn Semiconductors datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944440526852096) (8 pp, sha256 `9460c02a1dda9654`, retrieved 2026-10-21, tier: lcsc)+- **Datasheet:** [WeEn Semiconductors datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887230480203776) (13 pp, sha256 `287bbde2c83c7c62`, retrieved 2026-10-21, tier: lcsc) - **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - **CAD:** KiCad official libraries (CC-BY-SA 4.0). 

@@ -1,6 +1,6 @@ {   "slug": "bt137-600e",-  "version": "0.1.0",+  "version": "0.1.1",   "type": "component",   "description": "WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.",   "tags": [@@ -35,10 +35,10 @@     "mpn": "BT137-600E",     "manufacturer": "WeEn Semiconductors",     "package": "TO-220AB",-    "pin_count": 3,+    "pin_count": 4,     "category": "Transistors/Thyristors",     "subcategory": "Thyristors (SCR)/Modules",-    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944440526852096",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887230480203776",     "parts": {       "symbol": "bt137-600e.kicad_sym",       "footprint": "bt137-600e.kicad_mod",@@ -52,7 +52,7 @@       "lcsc": "C9220"     },     "distributor_check": {-      "checked_at": "2026-10-21T17:38:45Z",+      "checked_at": "2026-10-21T19:03:56Z",       "source": "Component Ocean /api/assign-pns",       "digikey": {         "pn": null,@@ -66,35 +66,41 @@     "pins": [       {         "number": "1",-        "name": "MT1",-        "type": "bidirectional",-        "description": "Main Terminal 1 (T1); one of the two bidirectional AC power terminals; IT(RMS) = 8 A, non-repetitive surge ITSM = 65 A (full cycle, F = 50 Hz), I²t = 21 A²s (tp = 10 ms)."+        "name": "T1",+        "type": "passive",+        "description": "Main terminal 1 of the 4Q triac; the datasheet references the four trigger quadrants to T2 and G."       },       {         "number": "2",-        "name": "MT2",-        "type": "bidirectional",-        "description": "Main Terminal 2 (T2); second bidirectional AC power terminal; also the exposed heatsink tab in TO-252-4R; IT(RMS) = 8 A, VTM ≤ 1.6 V at ITM = 10 A (tp = 380 µs, Tj = 25 °C); Rth(j-c) = 2.0 °C/W."+        "name": "T2",+        "type": "passive",+        "description": "Main terminal 2 of the triac; the datasheet uses T2 as the reference for the gate trigger quadrants."       },       {         "number": "3",         "name": "G",         "type": "input",-        "description": "Gate trigger input; IGT max 5-100 mA depending on sensitivity grade (D-G) and quadrant; VGT max 1.3 V (Quadrants I-II-III-IV, Tj = 25 °C); IGM max 2 A peak, PGM max 5 W peak, PG(AV) max 0.5 W."+        "description": "Gate, used to trigger the triac; the sensitive gate is intended for direct interfacing with microcontrollers, logic ICs and other low power gate trigger circuits."+      },+      {+        "number": "mb",+        "name": "T2",+        "type": "passive",+        "description": "Mounting base, internally connected to main terminal 2 (T2) and used as the heatsink-mounted tab."       }     ],     "provenance": {       "extractor": "ds2sf",       "datasheet": {-        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944440526852096",-        "pages": 8,-        "sha256": "9460c02a1dda9654",+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887230480203776",+        "pages": 13,+        "sha256": "287bbde2c83c7c62",         "source_tier": "lcsc"       },       "cad": "KiCad official (CC-BY-SA 4.0)",       "pins": {-        "total": 3,-        "described": 3,+        "total": 4,+        "described": 4,         "cites_pages": true,         "refuses_to_fabricate": true       }@@ -138,7 +144,7 @@         "zmin_mm": -9.75,         "centre_offset_mm": 0.932,         "footprint_binding": "identity",-        "sha256": "b501119f46b7a60afd08ea4ac4bbaa6a56d7238a4345f45c081cd38070a13c71",+        "sha256": "16ea559b3b41f221be9ed2e8161a3362c4f24598ee7f1835bb3c6e44ccdd54a6",         "checked": "2026-10-21",         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }

@@ -4,7 +4,7 @@   "slug": "bt137-600e",   "title": "BT137-600E",   "brief": "WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.",-  "version": "0.1.0",+  "version": "0.1.1",   "license": "CC-BY-SA-4.0",   "tags": [     "component",@@ -17,10 +17,10 @@     "mpn": "BT137-600E",     "manufacturer": "WeEn Semiconductors",     "package": "TO-220AB",-    "pin_count": 3,+    "pin_count": 4,     "category": "Transistors/Thyristors",     "subcategory": "Thyristors (SCR)/Modules",-    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944440526852096",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887230480203776",     "parts": {       "symbol": "bt137-600e.kicad_sym",       "footprint": "bt137-600e.kicad_mod",@@ -34,7 +34,7 @@       "lcsc": "C9220"     },     "distributor_check": {-      "checked_at": "2026-10-21T17:38:45Z",+      "checked_at": "2026-10-21T19:03:56Z",       "source": "Component Ocean /api/assign-pns",       "digikey": {         "pn": null,@@ -48,35 +48,41 @@     "pins": [       {         "number": "1",-        "name": "MT1",-        "type": "bidirectional",-        "description": "Main Terminal 1 (T1); one of the two bidirectional AC power terminals; IT(RMS) = 8 A, non-repetitive surge ITSM = 65 A (full cycle, F = 50 Hz), I²t = 21 A²s (tp = 10 ms)."+        "name": "T1",+        "type": "passive",+        "description": "Main terminal 1 of the 4Q triac; the datasheet references the four trigger quadrants to T2 and G."       },       {         "number": "2",-        "name": "MT2",-        "type": "bidirectional",-        "description": "Main Terminal 2 (T2); second bidirectional AC power terminal; also the exposed heatsink tab in TO-252-4R; IT(RMS) = 8 A, VTM ≤ 1.6 V at ITM = 10 A (tp = 380 µs, Tj = 25 °C); Rth(j-c) = 2.0 °C/W."+        "name": "T2",+        "type": "passive",+        "description": "Main terminal 2 of the triac; the datasheet uses T2 as the reference for the gate trigger quadrants."       },       {         "number": "3",         "name": "G",         "type": "input",-        "description": "Gate trigger input; IGT max 5-100 mA depending on sensitivity grade (D-G) and quadrant; VGT max 1.3 V (Quadrants I-II-III-IV, Tj = 25 °C); IGM max 2 A peak, PGM max 5 W peak, PG(AV) max 0.5 W."+        "description": "Gate, used to trigger the triac; the sensitive gate is intended for direct interfacing with microcontrollers, logic ICs and other low power gate trigger circuits."+      },+      {+        "number": "mb",+        "name": "T2",+        "type": "passive",+        "description": "Mounting base, internally connected to main terminal 2 (T2) and used as the heatsink-mounted tab."       }     ],     "provenance": {       "extractor": "ds2sf",       "datasheet": {-        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944440526852096",-        "pages": 8,-        "sha256": "9460c02a1dda9654",+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887230480203776",+        "pages": 13,+        "sha256": "287bbde2c83c7c62",         "source_tier": "lcsc"       },       "cad": "KiCad official (CC-BY-SA 4.0)",       "pins": {-        "total": 3,-        "described": 3,+        "total": 4,+        "described": 4,         "cites_pages": true,         "refuses_to_fabricate": true       }@@ -120,7 +126,7 @@         "zmin_mm": -9.75,         "centre_offset_mm": 0.932,         "footprint_binding": "identity",-        "sha256": "b501119f46b7a60afd08ea4ac4bbaa6a56d7238a4345f45c081cd38070a13c71",+        "sha256": "16ea559b3b41f221be9ed2e8161a3362c4f24598ee7f1835bb3c6e44ccdd54a6",         "checked": "2026-10-21",         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }@@ -454,7 +460,7 @@     "bt137-600e-hero.overlay.json",     "bt137-600e-etched.glb"   ],-  "visibility": {-    "public": true-  }+  "visibility": "public",+  "description": "WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.",+  "org": "adom" }\ No newline at end of file