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BT136X-600E

WeEn Semiconductors · TRIACs · TO-220F-3

BT136X-600E from WeEn Semiconductors, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 of the triac; the datasheet gives no separate electrical limit for this pin, and the device is rated for VDRM 600 V and IT(RMS) 4 A (Th ≤ 92 °C).
2 T2 passive Main terminal 2 of the triac; it is the reference for the gate trigger quadrants (T2+ / T2-), and the isolation capacitance from T2 to the external heatsink is 10 pF typical at f = 1 MHz.
3 G input Gate for triggering the triac in all four quadrants; limits are IGM 2 A peak, PGM 5 W peak and PG(AV) 0.5 W average over any 20 ms period.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-220F-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 600 V 4
RMS on-state current IT(RMS) 4 A full sine wave; Th ≤ 92 °C; Fig. 1; Fig. 2; Fig. 3 4
Non-repetitive peak on-state current ITSM 25 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 4
Non-repetitive peak on-state current ITSM 27 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms 4
I2t for fusing I2t 3.1 A2s tp = 10 ms; SIN 4
Rate of rise of on-state current dIT/dt 50 A/µs IG = 20 mA; T2+ G+ 4
Rate of rise of on-state current dIT/dt 10 A/µs IG = 50 mA; T2- G+ 4
Peak gate current IGM 2 A 4
Peak gate power PGM 5 W 4
Average gate power PG(AV) 0.5 W over any 20 ms period 4
Storage temperature Tstg -40 150 °C 4
Junction temperature Tj 125 °C 4
Thermal resistance from junction to heatsink Rth(j-h) 5.5 K/W full or half cycle; with heatsink compound; Fig. 6 7
Thermal resistance from junction to heatsink Rth(j-h) 7.2 K/W full or half cycle; without heatsink compound; Fig. 6 7
Thermal resistance from junction to ambient Rth(j-a) 55 K/W in free air 7
RMS isolation voltage Visol(RMS) 2500 V from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C 7
Gate trigger current IGT 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 8
Gate trigger current IGT 4 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 8
Gate trigger current IGT 5 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 8
Gate trigger current IGT 11 25 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 8
Latching current IL 3 15 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 8
Latching current IL 10 20 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 8
Latching current IL 2.5 15 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 8
Latching current IL 4 20 mA VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 8
Holding current IH 2.2 15 mA VD = 12 V; Tj = 25 °C; Fig. 9 8
On-state voltage VT 1.4 1.7 V IT = 5 A; Tj = 25 °C; Fig. 10 8
Gate trigger voltage VGT 0.7 1 V VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 8
Gate trigger voltage VGT 0.25 0.4 V VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 8
Off-state current ID 0.1 0.5 mA VD = 600 V; Tj = 125 °C 8

CAD (KiCad official)

  • Symbol: BT136X-600E
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (14 pp, sha256 7603f3557ed58939, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF