component
BT136X-600E
Public Made by Adomby adom
WeEn Semiconductors TRIACs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
BT136X-600E
WeEn Semiconductors · TRIACs · TO-220F-3
BT136X-600E from WeEn Semiconductors, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac; the datasheet gives no separate electrical limit for this pin, and the device is rated for VDRM 600 V and IT(RMS) 4 A (Th ≤ 92 °C). |
| 2 | T2 | passive | Main terminal 2 of the triac; it is the reference for the gate trigger quadrants (T2+ / T2-), and the isolation capacitance from T2 to the external heatsink is 10 pF typical at f = 1 MHz. |
| 3 | G | input | Gate for triggering the triac in all four quadrants; limits are IGM 2 A peak, PGM 5 W peak and PG(AV) 0.5 W average over any 20 ms period. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220F-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 600 | V | 4 | |||
| RMS on-state current | IT(RMS) | 4 | A | full sine wave; Th ≤ 92 °C; Fig. 1; Fig. 2; Fig. 3 | 4 | ||
| Non-repetitive peak on-state current | ITSM | 25 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 | 4 | ||
| Non-repetitive peak on-state current | ITSM | 27 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 4 | ||
| I2t for fusing | I2t | 3.1 | A2s | tp = 10 ms; SIN | 4 | ||
| Rate of rise of on-state current | dIT/dt | 50 | A/µs | IG = 20 mA; T2+ G+ | 4 | ||
| Rate of rise of on-state current | dIT/dt | 10 | A/µs | IG = 50 mA; T2- G+ | 4 | ||
| Peak gate current | IGM | 2 | A | 4 | |||
| Peak gate power | PGM | 5 | W | 4 | |||
| Average gate power | PG(AV) | 0.5 | W | over any 20 ms period | 4 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 4 | ||
| Junction temperature | Tj | 125 | °C | 4 | |||
| Thermal resistance from junction to heatsink | Rth(j-h) | 5.5 | K/W | full or half cycle; with heatsink compound; Fig. 6 | 7 | ||
| Thermal resistance from junction to heatsink | Rth(j-h) | 7.2 | K/W | full or half cycle; without heatsink compound; Fig. 6 | 7 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 55 | K/W | in free air | 7 | ||
| RMS isolation voltage | Visol(RMS) | 2500 | V | from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C | 7 | ||
| Gate trigger current | IGT | 2.5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 | 8 | |
| Gate trigger current | IGT | 4 | 10 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 | 8 | |
| Gate trigger current | IGT | 5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 | 8 | |
| Gate trigger current | IGT | 11 | 25 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 | 8 | |
| Latching current | IL | 3 | 15 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 | 8 | |
| Latching current | IL | 10 | 20 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 | 8 | |
| Latching current | IL | 2.5 | 15 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 | 8 | |
| Latching current | IL | 4 | 20 | mA | VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 | 8 | |
| Holding current | IH | 2.2 | 15 | mA | VD = 12 V; Tj = 25 °C; Fig. 9 | 8 | |
| On-state voltage | VT | 1.4 | 1.7 | V | IT = 5 A; Tj = 25 °C; Fig. 10 | 8 | |
| Gate trigger voltage | VGT | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 | 8 | |
| Gate trigger voltage | VGT | 0.25 | 0.4 | V | VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 | 8 | |
| Off-state current | ID | 0.1 | 0.5 | mA | VD = 600 V; Tj = 125 °C | 8 |
CAD (KiCad official)
- Symbol:
BT136X-600E - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (14 pp, sha256
7603f3557ed58939, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).