# BT136S

**Changjiang Electronics Tech (CJ)** · TRIACs · TO-252-2L

BT136S from Changjiang Electronics Tech (CJ), in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Main power terminal labelled ANODE in the TO-252-2L pinout; the device is rated for VDRM/VRRM 600 V and IT(RMS) 6 A at TC=107℃. |
| 2 | ANODE | passive | Second main power terminal labelled ANODE in the TO-252-2L pinout; the device is rated for ITSM 25 A (t=20ms) and an operating junction temperature range of -40 to +125℃. |
| 3 | GATE | input | Gate terminal for triggering the triac; peak gate current is limited to 2 A and average gate power dissipation to 0.5 W at Tj=125℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-252-2L |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Rated repetitive peak off-state/reverse voltage | VDRM,VRRM | 600 |  |  | V | ID=10μA | 1 |
| Rated repetitive peak off-state current | IDRM, IRRM |  |  | 10 | μA | VD=620V | 1 |
| On-state voltage | VTM |  |  | 1.7 | V | IT=5A | 1 |
| Gate trigger current, quadrant I | IGT |  |  | 10 | mA | T2(+), G(+); VD=12V, RL=100Ω | 1 |
| Gate trigger current, quadrant II | IGT |  |  | 10 | mA | T2(+), G(-); VD=12V, RL=100Ω | 1 |
| Gate trigger current, quadrant III | IGT |  |  | 10 | mA | T2(-), G(-); VD=12V, RL=100Ω | 1 |
| Gate trigger voltage, quadrant I | VGT |  |  | 1.45 | V | T2(+), G(+); VD=12V, RL=100Ω | 1 |
| Gate trigger voltage, quadrant II | VGT |  |  | 1.45 | V | T2(+), G(-); VD=12V, RL=100Ω | 1 |
| Gate trigger voltage, quadrant III | VGT |  |  | 1.45 | V | T2(-), G(-); VD=12V, RL=100Ω | 1 |
| Holding current | IH |  |  | 20 | mA | IT=100mA, IG=20mA | 1 |
| RMS on-state current (full sine wave) | IT(RMS) |  |  | 6 | A | TC=107℃ | 1 |
| Non repetitive surge peak on-state current (full sine wave, Tj=25℃) | ITSM |  |  | 25 | A | t=20ms | 1 |
| Non repetitive surge peak on-state current (full sine wave, Tj=25℃) | ITSM |  |  | 27 | A | t=16.7ms | 1 |
| Peak gate current | IGM |  |  | 2 | A |  | 1 |
| Average gate power dissipation | PG(AV) |  |  | 0.5 | W | Tj=125℃ | 1 |
| Storage junction temperature range | Tstg | -40 |  | 150 | ℃ |  | 1 |
| Operating junction temperature range | Tj | -40 |  | 125 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `BT136S`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `bt136s-etched.step` / `bt136s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bt136s.step` / `bt136s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/bt136s-datasheet.pdf) (1 pp, sha256 `44ef16ded38adbee`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bt136s-datasheet.pdf)