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BT136D

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FUXINSEMI Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT136D

FUXINSEMI · Thyristors (SCR)/Modules · TO-252

BT136D from FUXINSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (A1), the triac's lower-side main terminal per the circuit diagram on page 1; the number is assumed, not printed.
2 A2 passive Main terminal 2 (A2), the center lead, which the datasheet also shows connected to the mounting tab; the number is assumed, not printed.
3 G input Gate trigger input (G); triggers with IGT max 10 mA in quadrants I-II-III and 25 mA in quadrant IV, and VGT max 1.3 V; the number is assumed, not printed.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM 25 A full cycle, F=50Hz 2
RMS on-state current IT(RMS) 4 A 2
I2t value for fusing I2t 3.1 A2s tp=10ms 2
Critical rate of rise of on-state current, Ⅰ-Ⅱ-Ⅲ dIT/dt 50 A/μs IG =2×IGT, Ⅰ-Ⅱ-Ⅲ 2
Critical rate of rise of on-state current, Ⅳ dIT/dt 10 A/μs IG =2×IGT, Ⅳ 2
Peak gate current IGM 2 A 2
Average gate power dissipation PG(AV) 0.5 W 2
Junction Temperature TJ -40 125 ℃ 2
Storage Temperature TSTG -40 150 ℃ 2
Gate trigger current, Ⅰ-Ⅱ-Ⅲ IGT 10 mA VD =12V IT = 0.1A Tj =25℃ Ⅰ-Ⅱ-Ⅲ 2
Gate trigger current, Ⅳ IGT 25 mA VD =12V IT = 0.1A Tj =25℃ Ⅳ 2
Gate trigger voltage VGT 1.3 V Ⅰ-Ⅱ-Ⅲ-Ⅳ 2
Gate non-trigger voltage VGD 0.2 V VD =VDRM Tj =125℃ 2
Latching current, Ⅰ-Ⅲ-Ⅳ IL 15 mA VD =12V IGT = 0.1A Tj =25℃ Ⅰ-Ⅲ-Ⅳ 2
Latching current, Ⅱ IL 20 mA VD =12V IGT = 0.1A Tj =25℃ Ⅱ 2
Holding current IH 15 mA Ⅰ-Ⅱ-Ⅲ-Ⅳ 2
Critical-rate of rise of commutation voltage dVD/dt 20 V/μs VD=2/3VDRM Gate Open Tj =125℃ 2
Forward on voltage VTM 1.55 V ITM =6A tp=380μs 2
Repetitive Peak Off-State Current IDRM 5 μA VD =VDRM VR =VRRM Tj=25℃ 2
Repetitive Peak Reverse Current IRRM 500 μA Tj=125℃ 2
Thermal resistance junction to case (AC) Rth(j-c) 3 ℃/W Junction to case(AC) 2
Thermal resistance junction to ambient Rth(j-a) 70 ℃/W Junction to ambient 2

CAD (KiCad official)

  • Symbol: BT136D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: bt136d-etched.step / bt136d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt136d.step / bt136d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (4 pp, sha256 bd1c56c9f9cf55c6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF