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BT134S-600E

KY · Thyristors (SCR)/Modules · TO-252

BT134S-600E from KY, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac (symbol shows T1(1)), the current return terminal for the 4A RMS on-state current.
2 T2 passive Main terminal T2 of the triac (symbol shows T2(2)), also connected to the mounting tab in the TO-252 drawing; repetitive peak off-state voltage is 600V for BT134-600.
3 G input Gate trigger input (symbol shows G(3)); gate trigger voltage VGT is 1.5V max at VD=12V.

Key specifications

Parameter Value
Manufacturer KY
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Off-State Voltage (VDRM/VRRM) VDRM/VRRM 600 V BT134-600 variant 3
R.M.S On-State Current IT(RMS) 4 A Tc=110°C 3
I²t for fusing I²t 3.1 A²s Tp=10ms 3
Average Gate Power Dissipation PG(AV) 0.5 W Tj=125°C 3
Peak Gate Current IGM 2 A tp=20us Tj=125°C 3
Operating Junction Temperature Tj -40 125 °C 3
Storage Temperature TSTG -40 150 °C 3
Repetitive Peak Off-State Current IDRM 10 uA Tj=25°C 3
Repetitive Peak Off-State Current IDRM 0.5 mA Tj=125°C 3
Repetitive Peak Reverse Current IRRM 10 uA Tj=25°C 3
Repetitive Peak Reverse Current IRRM 0.5 mA Tj=125°C 3
Forward on voltage VTM 1.7 V IT=5A tp=380us 3
Gate non-trigger voltage VGD 0.2 V VD=12V, Tj=125°C 3
Holding current IH 15 mA VD=12V, IGT=0.1A 3
Gate trigger voltage VGT 1.5 V VD=12V 3
Gate trigger current, quadrants I, II, III IGT 10 mA VD=12V, IGT=0.1A 3
Gate trigger current, quadrant IV IGT 25 mA VD=12V, IGT=0.1A 3
Critical rate of rise of commutation current, quadrants I, II, III di/dt 50 A/us IT=6A, IGT=0.2A, dIg/dt=0.2A/us 3
Critical rate of rise of commutation current, quadrant IV di/dt 10 A/us IT=6A, IGT=0.2A, dIg/dt=0.2A/us 3
Critical rate of rise of commutation voltage dv/dt 50 V/us TJ=125°C, VD=2/3VDRM, gate open circuit, tp=16.7ms/tp=10ms 3

CAD (KiCad official)

  • Symbol: BT134S-600E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: bt134s-600e-etched.step / bt134s-600e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt134s-600e.step / bt134s-600e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KY datasheet (7 pp, sha256 1ca31a9d2e148258, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF