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BT134-800E

Public Made by Adom

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WEIDA Thyristors (SCR)/Modules, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT134-800E

WEIDA · Thyristors (SCR)/Modules · SOT-223

BT134-800E from WEIDA, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1) of the triac, the reference terminal for gate triggering; device is rated IT(RMS) 4 A and VDRM/VRRM 800 V for the BT134-800E.
2 T2 passive Main terminal 2 (T2) of the triac; device is rated IT(RMS) 4 A and VDRM/VRRM 800 V for the BT134-800E.
3 G input Gate trigger terminal; E grade needs IGT max 10 mA in quadrants I-II-III and 25 mA in quadrant IV (VD=12 V, RL=33 ohm), with VGT max 1.3 V.

Key specifications

Parameter Value
Manufacturer WEIDA
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current, Quadrants I-II-III IGT 10 mA VD=12V, RL=33Ω; Ⅰ-Ⅱ-Ⅲ 2
Gate trigger current, Quadrant IV IGT 25 mA VD=12V, RL=33Ω; Ⅳ 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ; Ⅰ-Ⅱ-Ⅲ-Ⅳ 2
Holding current IH 20 mA IT=100mA 2
Latching current, Quadrants I-III-IV IL 20 mA IG=1.2IGT; Ⅰ-Ⅲ-Ⅳ 2
Latching current, Quadrant II IL 35 mA IG=1.2IGT; Ⅱ 2
Critical rate of rise of off-state voltage dV/dt 50 V/µs VD=0.66×VDRM, Tj=125℃, gate open 2
On-state voltage VTM 1.7 V ITM=5A, tp=380μs, Tj=25℃ 2
Off-state leakage current (repetitive) IDRM/IRRM 5 µA VDRM=VRRM, Tj=25℃ 2
Off-state leakage current (repetitive) at high temperature IDRM/IRRM 0.5 mA VDRM=VRRM, Tj=125℃ 2
Thermal resistance junction to case (AC), SOT-223 Rth(j-c) 3.9 ℃/W junction to case (AC), SOT-223 3
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage (800V variant) VDRM 800 V Tj=25℃ 1
Repetitive peak reverse voltage (800V variant) VRRM 800 V Tj=25℃ 1
RMS on-state current IT(RMS) 4 A 1
Non repetitive surge peak on-state current ITSM 25 A full cycle, F=50Hz 2
I2t value for fusing I2t 3.1 A2s tp=10ms 2
Critical rate of rise of on-state current, Quadrants I-II-III dI/dt 50 A/μs IG=2×IGT; Ⅰ-Ⅱ-Ⅲ 2
Critical rate of rise of on-state current, Quadrant IV dI/dt 10 A/μs IG=2×IGT; Ⅳ 2
Peak gate current IGM 2 A 2
Average gate power dissipation PG(AV) 0.5 W 2
Peak gate power PGM 5 W 2

CAD (KiCad official)

  • Symbol: BT134-800E
  • Footprint: Package_TO_SOT_THT:TO-126-3_Vertical
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: bt134-800e-etched.step / bt134-800e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt134-800e.step / bt134-800e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (9 pp, sha256 ef605bbb42f3956a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF