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BT132G

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FUXINSEMI Thyristors (SCR)/Modules, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT132G

FUXINSEMI · Thyristors (SCR)/Modules · TO-92-3

BT132G from FUXINSEMI, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (A1) of the triac, the reference terminal on the circuit diagram, with RMS on-state current IT(RMS) rated 2 A.
2 G input Gate trigger input, with gate trigger current IGT max 5 mA (quadrants I-II-III) or 10 mA (quadrant IV) at VD=12 V, gate trigger voltage VGT max 1.3 V, and peak gate current IGM 1 A.
3 A2 passive Main terminal 2 (A2) of the triac, which carries the on-state current of up to 2 A RMS and blocks the repetitive peak off-state voltage VDRM.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 60 V 2
Repetitive peak reverse voltage VRRM 60 V 2
RMS on-state current IT(RMS) 2 A 2
Non repetitive surge peak on-state current ITSM 16 A full cycle, F=50Hz 2
I2t value for fusing I2t 2.6 A2s tp=10ms 2
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2×IGT, Ⅰ-Ⅱ-Ⅲ 2
Critical rate of rise of on-state current dI/dt 10 A/μs IG=2×IGT, Ⅳ 2
Peak gate current IGM 1 A 2
Average gate power dissipation PG(AV) 0.5 W 2
Junction temperature TJ -40 125 ℃ 2
Storage temperature TSTG -40 150 ℃ 2
Gate trigger current IGT 5 mA VD=12V, IT=0.1A, Tj=25℃, Ⅰ-Ⅱ-Ⅲ 2
Gate trigger current IGT 10 mA VD=12V, IT=0.1A, Tj=25℃, Ⅳ 2
Gate trigger voltage VGT 1.3 V Ⅰ-Ⅱ-Ⅲ-Ⅳ 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃ 2
Latching current IL 15 mA VD=12V, IGT=0.1A, Tj=25℃, Ⅰ-Ⅲ-Ⅳ 2
Latching current IL 20 mA VD=12V, IGT=0.1A, Tj=25℃, Ⅱ 2
Holding current IH 10 mA Ⅰ-Ⅱ-Ⅲ-Ⅳ 2
Critical-rate of rise of commutation voltage dV/dt 20 V/μs VD=2/3VDRM, Gate open, Tj=125℃ 2
Forward on voltage VTM 1.55 V ITM=3A, tp=380μs 2
Repetitive peak off-state current IDRM 5 μA VD=VDRM, VR=VRRM, Tj=25℃ 2
Repetitive peak reverse current IRRM 200 μA Tj=125℃ 2
Thermal resistance junction to case (AC) Rth(j-c) 60 ℃/W Junction to case (AC) 2
Thermal resistance junction to ambient Rth(j-a) 150 ℃/W Junction to ambient 2

CAD (KiCad official)

  • Symbol: BT132G
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: bt132g-etched.step / bt132g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt132g.step / bt132g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (4 pp, sha256 159b43d1e6755605, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF