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Contents

README

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BT131-800T

WEIDA · Thyristors (SCR)/Modules · SOT-223

BT131-800T from WEIDA, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1), the triac's reference terminal on the SOT-223-3L package; the datasheet rates the part at IT(RMS) 1 A and VDRM/VRRM 800 V for the -800 version.
2 T2 passive Main terminal 2 (T2) of the triac, on the middle lead of the SOT-223-3L package; the datasheet rates the part at IT(RMS) 1 A and VDRM/VRRM 800 V for the -800 version.
3 G input Gate trigger input; for the T-grade part IGT is limited to 3 mA in quadrants I-II-III and 5 mA in quadrant IV, with VGT max 1.3 V, and peak gate current IGM is 2 A.

Key specifications

Parameter Value
Manufacturer WEIDA
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 800 V Tj=25℃ 1
Repetitive peak reverse voltage VRRM 800 V Tj=25℃ 1
RMS on-state current IT(RMS) 1 A 1
Non repetitive surge peak on-state current ITSM 16 A full cycle, F=50Hz 1
I2t value for fusing I2t 1.28 A²s tp=10ms 1
Critical rate of rise of on-state current, quadrants Ⅰ-Ⅱ-Ⅲ dI/dt 50 A/μs IG=2×IGT 1
Critical rate of rise of on-state current, quadrant Ⅳ dI/dt 10 A/μs IG=2×IGT 1
Peak gate current IGM 2 A 1
Average gate power dissipation PG(AV) 0.5 W 1
Peak gate power PGM 5 W 1
Gate trigger current, quadrants Ⅰ-Ⅱ-Ⅲ IGT 3 mA VD=12V, RL=33Ω 2
Gate trigger current, quadrant Ⅳ IGT 5 mA 2
Gate non-trigger voltage, quadrants Ⅰ-Ⅱ-Ⅲ-Ⅳ VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ 2
Holding current IH 5 mA IT=100mA 2
Latching current, quadrants Ⅰ-Ⅲ-Ⅳ IL 5 mA IG=1.2IGT 2
Latching current, quadrant Ⅱ IL 10 mA 2
Critical rate of rise of off-state voltage dV/dt 20 V/µs VD=0.66×VDRM, Tj=125℃, Gate open 2
On-state voltage VTM 1.5 V ITM=1.4A, tp=380μs, Tj=25℃ 2
Repetitive peak off-state current IDRM/IRRM 5 µA VDRM=VRRM, Tj=25℃ 2
Repetitive peak off-state current IDRM/IRRM 0.5 mA Tj=125℃ 2
Gate trigger voltage, quadrants Ⅰ-Ⅱ-Ⅲ-Ⅳ VGT 1.3 V 2
Junction to case thermal resistance (AC), SOT-223-2L Rth(j-c) 31 ℃/W junction to case (AC), SOT-223-2L 2

CAD (KiCad official)

  • Symbol: BT131-800T
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: bt131-800t-etched.step / bt131-800t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt131-800t.step / bt131-800t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (7 pp, sha256 151758d034c6b145, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF