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BT131-600-MS

MSKSEMI · TRIACs · SOT-89

BT131-600-MS from MSKSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1) of the TRIAC; the datasheet gives only its pin assignment, with the device rated for 600 V repetitive peak off-state voltage (VDRM, VRRM) and 2 A RMS on-state current (IT(RMS)).
2 T2 passive Main terminal 2 (T2) of the TRIAC; the datasheet gives only its pin assignment, with a non-repetitive peak on-state current limit of 20 A (ITSM) and a repetitive rate of rise of on-state current limit of 50 A/µs for quadrants I to III and 10 A/µs for quadrant IV.
3 G input Gate (G) trigger terminal; the datasheet limits peak gate current to 1.8 A (IGM), peak gate power to 4 W (PGM), average gate power to 0.5 W (PG(AV)), and gate trigger current IGT to 25 mA maximum in quadrant IV.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-89
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Off-State Voltages VDRM, VRRM 600 V 2
RMS on-State Current IT(RMS) 2 A 2
Non-Repetitive Peak On-State Current ITSM 20 A 2
I2t for fusing I2t 2.6 A2s 2
Repetitive rate of rise of on-state current after triggering dIT/dt 50 A/uS After triggering; quadrant I 2
Repetitive rate of rise of on-state current after triggering dIT/dt 10 A/uS After triggering; quadrant IV 2
Peak gate current IGM 1.8 A 2
Peak Gate Power PGM 4 W 2
Average Gate Power PG(AV) 0.5 W 2
Operating junction temperature TJ 125 ℃ 2
Storage Temperature TSTG -40 150 ℃ 2
Peak Repetitive Forward or Reverse Blocking Current, quadrant I IDRM/IRRM 10 uA VAK = Rated VDRM or VRRM; quadrant I 3
Peak Repetitive Forward or Reverse Blocking Current, quadrant II IDRM/IRRM 10 uA VAK = Rated VDRM or VRRM; quadrant II 3
Peak Repetitive Forward or Reverse Blocking Current, quadrant III IDRM/IRRM 10 uA VAK = Rated VDRM or VRRM; quadrant III 3
Gate Trigger Current, quadrant IV IGT 25 mA VD=12V, RL=100Ω; quadrant IV 3
Gate Trigger Voltage VGT 1.5 V VD=12V, IT=100mA 3
Peak Forward On-State Voltage VTM 1.7 V IT=4.0A 3
Latch Current, quadrant I IL 15 mA VD=12V, IG=0.1A; quadrant I 3
Latch Current, quadrant II IL 15 mA VD=12V, IG=0.1A; quadrant II 3
Latch Current, quadrant III IL 15 mA VD=12V, IG=0.1A; quadrant III 3
Latch Current, quadrant IV IL 20 mA VD=12V, IG=0.1A; quadrant IV 3
Holding Current IH 15 mA VD=12V, IG=0.1A 3

CAD (KiCad official)

  • Symbol: BT131-600-MS
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: bt131-600-ms-etched.step / bt131-600-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt131-600-ms.step / bt131-600-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 ceb4b11128bcd66c, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF