component
BSV236SPH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSV236SPH6327
Infineon Technologies · MOSFETs · SOT-363
BSV236SPH6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for VDS of -20 V (V(BR)DSS min -20 V) with continuous drain current ID of -1.5 A at TA=25 °C. |
| 2 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for VDS of -20 V (V(BR)DSS min -20 V) with continuous drain current ID of -1.5 A at TA=25 °C. |
| 3 | Gate | input | Gate terminal with gate-source voltage limited to ±12 V, and gate threshold voltage VGS(th) of -0.6 V to -1.2 V at ID = -8 µA. |
| 4 | Source | passive | Source terminal of the P-channel MOSFET, serving as the reference for the gate-source voltage (VGS ±12 V maximum). |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for VDS of -20 V (V(BR)DSS min -20 V) with continuous drain current ID of -1.5 A at TA=25 °C. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for VDS of -20 V (V(BR)DSS min -20 V) with continuous drain current ID of -1.5 A at TA=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-363 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | -1.5 | A | TA=25°C | 1 | ||
| Continuous drain current | ID | -1.2 | A | TA=70°C | 1 | ||
| Pulsed drain current | ID puls | -6 | A | TA=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 9.5 | mJ | ID=-1.5 A, VDD=-10V, RGS=25Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | -6 | kV/µs | IS=-1.5A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C | 1 | ||
| Gate source voltage | VGS | -12 | 12 | V | 1 | ||
| Power dissipation | Ptot | 0.56 | W | TA=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction - soldering point | RthJS | 90 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD on PCB, minimum footprint | RthJA | 220 | K/W | SMD version, device on PCB, @ min. footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD on PCB, 6 cm2 cooling area | RthJA | 110 | K/W | SMD version, device on PCB, @ 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -0.6 | -0.9 | -1.2 | V | VGS = VDS, ID=-8µA | 2 |
| Zero gate voltage drain current | IDSS | -0.1 | -1 | µA | VDS=-20V, VGS=0, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | -10 | -100 | µA | VDS=-20V, VGS=0, Tj=150°C | 2 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-12V, VDS=0 | 2 | |
| Drain-source on-state resistance | RDS(on) | 193 | 285 | mΩ | VGS=-2.5V, ID=-0.8A | 2 | |
| Drain-source on-state resistance | RDS(on) | 131 | 175 | mΩ | VGS=-4.5, ID=-1.5A | 2 | |
| Transconductance | gfs | 2.2 | 4.4 | S | VDS≥2IDRDS(on)max, ID=-1.2A | 3 | |
| Turn-on delay time | td(on) | 5.7 | 8.5 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 | |
| Rise time | tr | 8.5 | 12.7 | ns | 3 | ||
| Turn-off delay time | td(off) | 14.1 | 21.1 | ns | 3 | ||
| Fall time | tf | 12.2 | 18.3 | ns | 3 | ||
| Gate to source charge | Qgs | -0.4 | -0.6 | nC | VDD=-10V, ID=-1.5A | 3 | |
| Gate to drain charge | Qgd | -1.8 | -2.7 | nC | 3 | ||
| Gate charge total | Qg | -3.8 | -5.7 | nC | VDD=-10V, ID=-1.5A, VGS=0 to -4.5V | 3 | |
| Inverse diode continuous forward current | IS | -0.11 | A | TA=25°C | 3 | ||
| Inverse diode direct current, pulsed | ISM | -6 | A | 3 | |||
| Inverse diode forward voltage | VSD | 0.88 | 1.3 | V | VGS=0, /IF/ = /ID/ | 3 | |
| Reverse recovery time | trr | 16.4 | 20.5 | ns | VR=-10V, /IF/ = /ID/, diF/dt=100A/µs | 3 | |
| Reverse recovery charge | Qrr | 3.4 | 4.3 | nC | 3 | ||
| Input capacitance | Ciss | 228 | pF | VGS=0, VDS=-15V, f=1MHz | 3 | ||
| Output capacitance | Coss | 92 | pF | 3 | |||
| Reverse transfer capacitance | Crss | 75 | pF | 3 | |||
| Gate plateau voltage | V(plateau) | -1.6 | V | VDD=-10V, ID=-1.5A | 3 |
CAD (KiCad official)
- Symbol:
BSV236SPH6327 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bsv236sph6327-etched.step/bsv236sph6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsv236sph6327.step/bsv236sph6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
655fdd1d5ee2b6f3, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).