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Contents

README

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BST82

Nexperia · MOSFETs · SOT-23

BST82 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel TrenchMOS MOSFET; the datasheet's limiting values give a gate-source voltage of ±20 V DC (Table 3).
2 S passive Source of the N-channel MOSFET; the source-drain diode forward current IS is limited to 190 mA DC at Tsp = 25 °C (Table 3).
3 D passive Drain of the N-channel MOSFET; the datasheet limits VDS to 100 V DC (Tj = 25 to 150 °C) and ID to 190 mA DC at Tsp = 25 °C with VGS = 5 V (Table 3).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage (DC) VDS 100 V Tj = 25 to 150 °C 3
Drain-gate voltage (DC) VDGR 100 V Tj = 25 to 150 °C; RGS = 20 kΩ 3
Gate-source voltage (DC) VGS -20 20 V 3
Drain current (DC) ID 190 mA Tsp = 25 °C; VGS = 5 V; Figure 2 and 3 3
Drain current (DC) ID 120 mA Tsp = 100 °C; VGS = 5 V; Figure 2 3
Peak drain current IDM 0.8 A Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 3
Total power dissipation Ptot 0.83 W Tsp = 25 °C; Figure 1 3
Storage temperature Tstg -65 150 °C 3
Operating junction temperature Tj -65 150 °C 3
Source (diode forward) current (DC) IS 190 mA Tsp = 25 °C 3
Peak source (diode forward) current ISM 0.8 A Tsp = 25 °C; pulsed; tp ≤ 10 µs 3
Drain-source breakdown voltage V(BR)DSS 100 130 V ID = 10 µA; VGS = 0 V; Tj = 25 °C 6
Drain-source breakdown voltage V(BR)DSS 89 V ID = 10 µA; VGS = 0 V; Tj = −55 °C 6
Gate-source threshold voltage VGS(th) 0.6 V ID = 1 mA; VDS = VGS; Figure 9; Tj = 150 °C 6
Gate-source threshold voltage VGS(th) 3.5 V ID = 1 mA; VDS = VGS; Figure 9; Tj = −55 °C 6
Drain-source leakage current IDSS 0.01 1 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
Drain-source leakage current IDSS 10 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C 6
Gate-source leakage current IGSS 10 100 nA VGS = ±20 V; VDS = 0 V 6
Drain-source on-state resistance RDSon 5 10 Ω VGS = 5 V; ID = 150 mA; Figure 7 and 8; Tj = 25 °C 6
Drain-source on-state resistance RDSon 23 Ω VGS = 5 V; ID = 150 mA; Figure 7 and 8; Tj = 150 °C 6
Input capacitance Ciss 25 40 pF VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 6
Output capacitance Coss 8.5 15 pF VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 6
Reverse transfer capacitance Crss 5 10 pF VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 6
Turn-on time ton 3 10 ns VDD = 50 V; RD = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω 6
Turn-off time toff 12 15 ns VDD = 50 V; RD = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω 6
Source-drain (diode forward) voltage VSD 0.95 1.5 V IS = 300 mA; VGS = 0 V; Figure 13 6
Thermal resistance from junction to solder point Rth(j-sp) 150 K/W Mounted on a metal clad substrate; Figure 4 5
Thermal resistance from junction to ambient Rth(j-a) 350 K/W Mounted on a printed circuit board; minimum footprint 5

CAD (KiCad official)

  • Symbol: BST82
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bst82-etched.step / bst82-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bst82.step / bst82.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 b9719d15e7f7710e, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF