# BSS84LT1G-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

BSS84LT1G-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the device is rated for a drain-source voltage of -60 V (VDS). |
| 3 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -500 mA at TA = 25 °C (-350 mA at TA = 100 °C), with pulsed drain current up to -1500 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -500 |  |  | mA | TA = 25 °C | 1 |
| Continuous Drain Current | ID | -350 |  |  | mA | TA = 100 °C | 1 |
| Pulsed Drain Current | IDM | -1500 |  |  | mA |  | 1 |
| Power Dissipation | PD |  |  | 460 | mW | TA = 25 °C, surface mounted on FR4 board (note a) | 1 |
| Power Dissipation | PD |  |  | 240 | mW | TA = 100 °C, surface mounted on FR4 board (note a) | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 350 | °C/W | Surface mounted on FR4 board (note a) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | VDS | -60 |  |  | V | VGS = 0 V, ID = - 10 µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -3 |  | -1 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -10 |  | 10 | µA | VDS = 0 V, VGS = ± 20 V | 2 |
| Gate-Body Leakage | IGSS | -200 |  | 200 | nA | VDS = 0 V, VGS = ± 10 V | 2 |
| Gate-Body Leakage | IGSS | -500 |  | 500 | nA | VDS = 0 V, VGS = ± 10 V, TJ = 85 °C | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | -25 |  |  |  | VDS = - 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | -250 |  |  |  | VDS = - 60 V, VGS = 0 V, TJ = 85 °C | 2 |

## CAD (KiCad official)

- Symbol: `BSS84LT1G-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `bss84lt1g-vb-etched.step` / `bss84lt1g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss84lt1g-vb.step` / `bss84lt1g-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602994291488931840) (7 pp, sha256 `872d8263bc5a2acd`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss84lt1g-vb-datasheet.pdf)