component
BSS84LT1G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS84LT1G-HXY
HXY MOSFET · MOSFETs · SOT-23
BSS84LT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel enhancement MOSFET, with VGS rated ±20 V maximum and RDS(on) specified at VGS=-10 V and -4.5 V. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the body diode anode; ID is -0.13 A continuous and -0.5 A pulsed. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is rated -50 V maximum with ID of -0.13 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -50 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -0.13 | A | 1 | |||
| Pulsed Drain Current | IDM | -0.5 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.35 | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | -50 | V | VGS=0, ID=250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -0.8 | -2 | V | VDS=VGS, ID=-250µA | 2 | |
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS=0, VGS=±10V | 2 | |
| Zero gate voltage drain current | IDSS | -10 | µA | VDS=-50V, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | -100 | nA | VDS=-40V, VGS=0V | 2 | ||
| Drain-source on-resistance | RDS(on) | 2 | 5 | Ω | VGS=-10V, ID=-0.13A | 2 | |
| Drain-source on-resistance | RDS(on) | 2.5 | 6 | Ω | VGS=-4.5V, ID=-0.13A | 2 | |
| Diode forward voltage | VSD | -1 | V | IS=-0.13A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
BSS84LT1G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss84lt1g-hxy-etched.step/bss84lt1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss84lt1g-hxy.step/bss84lt1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
e38aadf2dbf723d8, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).