# BSS84KDW

**Siliup** · MOSFETs · SOT-363

BSS84KDW from Siliup, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; the circuit diagram shows its body diode and the gate-protection Zener tied to this pin. |
| 2 | G1 | input | Gate of P-channel MOSFET 1 with ESD protection (2KV); gate-source voltage is limited to ±20 V and threshold is -0.8 to -2.5 V. |
| 3 | D2 | passive | Drain of P-channel MOSFET 2; the drain-source rating is -60 V and the continuous drain current is -130 mA. |
| 4 | S2 | passive | Source of P-channel MOSFET 2; the circuit diagram shows its body diode and the gate-protection Zener tied to this pin. |
| 5 | G2 | input | Gate of P-channel MOSFET 2 with ESD protection (2KV); gate-source voltage is limited to ±20 V and threshold is -0.8 to -2.5 V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; the drain-source rating is -60 V and the continuous drain current is -130 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-48V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -10 |  | 10 | uA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.8 | -1.5 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.2 | 6 | Ω | VGS=-10V, ID=-150mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.5 | 7 | Ω | VGS=-4.5V, ID=-150mA | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDSS |  |  | -60 | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | -130 | mA |  | 2 |
| Pulse Drain Current Tested | IDM |  |  | -520 | mA |  | 2 |
| Power Dissipation | PD |  |  | 320 | mW |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 2 |
| Thermal Resistance Junction-to-Ambient | RθJA |  |  | 390 | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `BSS84KDW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bss84kdw-etched.step` / `bss84kdw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss84kdw.step` / `bss84kdw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Siliup datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604428845995216896) (5 pp, sha256 `89c1bf963119237b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss84kdw-datasheet.pdf)