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BSS84AKW

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Nexperia MOSFETs, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS84AKW

Nexperia · MOSFETs · SC-70

BSS84AKW from Nexperia, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with gate-source voltage limited to -20 V to 20 V (Table 5).
2 S passive Source of the MOSFET, with source current limited to -150 mA at Tamb = 25 °C (Table 5).
3 D passive Drain of the MOSFET, with drain-source voltage limited to -50 V and drain current to -150 mA at Tamb = 25 °C (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SC-70
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
drain-source voltage VDS -50 V Tj = 25 °C 3
gate-source voltage VGS -20 20 V 3
drain current ID -150 mA VGS = -10 V; Tamb = 25 °C 3
drain current ID -95 mA VGS = -10 V; Tamb = 100 °C 3
peak drain current IDM -0.6 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
total power dissipation Ptot 260 mW Tamb = 25 °C 3
total power dissipation Ptot 310 mW 3
total power dissipation Ptot 830 mW Tsp = 25 °C 3
junction temperature Tj -55 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
source current IS -150 mA Tamb = 25 °C 3
electrostatic discharge voltage VESD 1000 V HBM 3
thermal resistance from junction to ambient Rth(j-a) 415 480 K/W in free air; [1] 5
thermal resistance from junction to ambient Rth(j-a) 350 400 K/W in free air; [2] 5
thermal resistance from junction to solder point Rth(j-sp) 150 K/W 5
drain-source breakdown voltage V(BR)DSS -50 V ID = -10 µA; VGS = 0 V; Tj = 25 °C 6
gate-source threshold voltage VGSth -1.1 -1.6 -2.1 V ID = -250 µA; VDS =VGS; Tj = 25 °C 6
drain leakage current IDSS -1 µA VDS = -50 V; VGS = 0 V; Tj = 25 °C 6
drain leakage current IDSS -2 µA VDS = -50 V; VGS = 0 V; Tj = 150 °C 6
gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
drain-source on-state resistance RDSon 4.5 7.5 Ω VGS = -10 V; ID = -100 mA; Tj = 25 °C 6
drain-source on-state resistance RDSon 8 13.5 Ω VGS = -10 V; ID = -100 mA; Tj = 150 °C 6
drain-source on-state resistance RDSon 5.7 8.5 Ω VGS = -5 V; ID = -100 mA; Tj = 25 °C 6
total gate charge QG(tot) 0.26 0.35 nC VDS = -25 V; ID = -200 mA; VGS = -5 V; Tj = 25 °C 6
input capacitance Ciss 24 36 pF VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
turn-on delay time td(on) 13 26 ns VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) =6 Ω; Tj = 25 °C 6
turn-off delay time td(off) 48 96 ns 6
source-drain voltage VSD -0.48 -0.85 -1.2 V IS = -115 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: BSS84AKW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: bss84akw-etched.step / bss84akw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss84akw.step / bss84akw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 c423e2f424990cd9, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF