component

BSS84AKV

Public Made by Adom

by adom

Nexperia MOSFETs, SOT-666. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsbss84akvfactory-2.0.0extractor-text

Verified BSS84AKV

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 6 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSS84AKV · SOT-666 · 6 pins
  • ✓copper: 6 copper pads, none touching another net
  • ✓datasheet: all 6 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-666
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-fuz2xd6k/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 6 pins = 6 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 6 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bss84akv.kicad_sym✓ bss84akv.kicad_mod✓ bss84akv.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers bss84akv: viewers · Ray 12d ago
bss84akv-etched.glb Publish 0.1.0 · Ray 12d ago
bss84akv-etched.step bss84akv: factory component page (tier=mfr) · Ray 12d ago
bss84akv-hero.glb bss84akv: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
bss84akv-hero.overlay.json Publish 0.1.0 · Ray 12d ago
bss84akv.glb Publish 0.1.0 · Ray 12d ago
bss84akv.kicad_mod Publish 0.1.0 · Ray 12d ago
bss84akv.kicad_sym Publish 0.1.0 · Ray 12d ago
bss84akv.lbr Publish 0.1.0 · Ray 12d ago
bss84akv.step Publish 0.1.0 · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago
verification.json Verified: Published by the parts factory: tier mfr, 6 pins · Ray 12d ago

BSS84AKV

Nexperia · MOSFETs · SOT-666

BSS84AKV from Nexperia, in a SOT-666. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of transistor 1 (P-channel); VDS max -50 V and ID max -170 mA per transistor.
2 G1 input Gate of transistor 1; VGS limited to -20 V to 20 V, threshold -1.1 to -2.1 V, ESD protected up to 1 kV HBM.
3 D2 passive Drain of transistor 2 (P-channel); VDS max -50 V and ID max -170 mA per transistor.
4 S2 passive Source of transistor 2 (P-channel); VDS max -50 V and ID max -170 mA per transistor.
5 G2 input Gate of transistor 2; VGS limited to -20 V to 20 V, threshold -1.1 to -2.1 V, ESD protected up to 1 kV HBM.
6 D1 passive Drain of transistor 1 (P-channel); VDS max -50 V and ID max -170 mA per transistor.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-666
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -50 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID -170 mA VGS = -10 V; Tamb = 25 °C [1] 3
Drain current ID -110 mA VGS = -10 V; Tamb = 100 °C [1] 3
Peak drain current IDM -0.7 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation per transistor Ptot 330 mW Tamb = 25 °C [2] 3
Total power dissipation per transistor Ptot 390 mW Tamb = 25 °C [1] 3
Total power dissipation per transistor Ptot 1090 mW Tsp = 25 °C 3
Total power dissipation per device Ptot 500 mW Tamb = 25 °C [2] 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS -170 mA Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 1000 V HBM [3] 3
Thermal resistance junction to ambient per transistor Rth(j-a) 330 380 K/W in free air [1] 5
Thermal resistance junction to ambient per transistor Rth(j-a) 280 320 K/W in free air [2] 5
Thermal resistance junction to solder point Rth(j-sp) 115 K/W 5
Thermal resistance junction to ambient per device Rth(j-a) 250 K/W in free air [1] 5
Drain-source breakdown voltage V(BR)DSS -50 V ID = -10 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth -1.1 -1.6 -2.1 V ID = -250 µA; VDS=VGS; Tj = 25 °C 6
Drain leakage current IDSS -1 µA VDS = -50 V; VGS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS -2 µA VDS = -50 V; VGS = 0 V; Tj = 150 °C 6
Gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 4.5 7.5 Ω VGS = -10 V; ID = -100 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 8 13.5 Ω VGS = -10 V; ID = -100 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 5.7 8.5 Ω VGS = -5 V; ID = -100 mA; Tj = 25 °C 6
Total gate charge QG(tot) 0.26 0.35 nC VDS = -25 V; ID = -200 mA; VGS = -5 V; Tj = 25 °C 6
Input capacitance Ciss 24 36 pF VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Turn-on delay time td(on) 13 26 ns VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Turn-off delay time td(off) 48 96 ns VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Source-drain voltage VSD -0.48 -0.85 -1.2 V IS = -115 mA; VGS = 0 V; Tj = 25 °C 6
Forward transconductance gfs 150 mS VDS = -10 V; ID = -100 mA; Tj = 25 °C 6
Gate-source charge QGS 0.12 nC VDS = -25 V; ID = -200 mA; VGS = -5 V; Tj = 25 °C 6
Gate-drain charge QGD 0.09 nC VDS = -25 V; ID = -200 mA; VGS = -5 V; Tj = 25 °C 6
Output capacitance Coss 4.5 pF VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Reverse transfer capacitance Crss 1.3 pF VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Rise time tr 11 ns VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Fall time tf 25 ns VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: BSS84AKV
  • Footprint: Package_TO_SOT_SMD:SOT-666
  • 3D model: SOT-666 (KiCad packages3D, STEP)
  • 3D model files: bss84akv-etched.step / bss84akv-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss84akv.step / bss84akv.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 4781aebdcb181754, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF