component
BSS84AK-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBSS84AK-HXY
HXY MOSFET · MOSFETs · SOT-23
BSS84AK-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement-mode MOSFET; gate-source voltage limit is ±20 V. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage is rated -50 V and continuous drain current -0.13 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is rated -50 V, continuous ID -0.13 A and pulsed IDM -0.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -50 | V | VGS=0, ID=250µA | 2 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS=0, VGS=±10V | 2 | |
| Zero gate voltage drain current | IDSS | -10 | µA | VDS=-50V, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | -100 | nA | VDS=-40V, VGS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | -0.8 | -2 | V | VDS=VGS, ID=-250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 2 | 5 | Ω | VGS=-10V, ID=-0.13A | 2 | |
| Drain-source on-resistance | RDS(on) | 2.5 | 6 | Ω | VGS=-4.5V, ID=-0.13A | 2 | |
| Diode forward voltage | VSD | -1 | V | IS=-0.13A, VGS=0V | 2 | ||
| Drain-source voltage | VDS | -50 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Drain current-continuous | ID | -0.13 | A | 1 | |||
| Pulsed drain current | IDM | -0.5 | A | 1 | |||
| Maximum power dissipation | PD | 0.35 | 1 | ||||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-to-ambient | RθJA | 62.5 | ℃/W | Junction-to-ambient (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
BSS84AK-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss84ak-hxy-etched.step/bss84ak-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss84ak-hxy.step/bss84ak-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
5b0a986741fb758b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).