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BSS8402DWQ-7

Public Made by Adom

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Diodes Incorporated MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS8402DWQ-7

Diodes Incorporated · MOSFETs · SOT-363

BSS8402DWQ-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel Q1 (60V, 115mA, RDS(ON) max 13.5Ω at VGS=10V).
2 G1 input Gate of N-channel Q1, with gate-source voltage rated ±20V continuous and ±40V pulsed.
3 D2 passive Drain of P-channel Q2 (-50V, -130mA, RDS(ON) max 10Ω at VGS=-5V).
4 S2 passive Source of P-channel Q2 (-50V, -130mA).
5 G2 input Gate of P-channel Q2, with gate-source voltage rated 20V continuous and threshold of -0.8V to -2.0V.
6 D1 passive Drain of N-channel Q1 (60V, 115mA continuous, 800mA pulsed).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Q1 Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA 3
Q1 Zero Gate Voltage Drain Current @ TC = +25°C IDSS 1 µA VDS = 60V, VGS = 0V, TC = +25°C 3
Q1 Zero Gate Voltage Drain Current @ TC = +125°C IDSS 500 µA VDS = 60V, VGS = 0V, TC = +125°C 3
Q1 Gate-Body Leakage IGSS -10 10 nA VGS = ±20V, VDS = 0V 3
Q1 Gate Threshold Voltage VGS(TH) 1 2.5 V VDS = VGS, ID = 250µA 3
Q1 Static Drain-Source On-Resistance RDS(ON) 13.5 Ω VGS = 10V, ID = 0.5A 3
Q1 On-State Drain Current ID(ON) 0.5 1 A VGS = 10V, VDS = 7.5V 3
Q1 Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A 3
Q1 Input Capacitance Ciss 22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Q1 Output Capacitance Coss 11 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Q1 Reverse Transfer Capacitance Crss 2 5 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Q1 Turn-On Delay Time tD(ON) 7 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 3
Q1 Turn-Off Delay Time tD(OFF) 11 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 3
Q2 Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250µA 3
Q2 Zero Gate Voltage Drain Current IDSS -1 µA VDS = -50V, VGS = 0V, TJ = +25°C 3
Q2 Zero Gate Voltage Drain Current IDSS -2 µA VDS = -50V, VGS = 0V, TJ = +125°C 3
Q2 Zero Gate Voltage Drain Current IDSS -100 nA VDS = -25V, VGS = 0V, TJ = +25°C 3
Q2 Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V 3
Q2 Gate Threshold Voltage VGS(TH) -0.8 -2 V VDS = VGS, ID = -1mA 3
Q2 Static Drain-Source On-Resistance RDS(ON) 10 Ω VGS = -5V, ID = -0.100A 3
Q2 Forward Transconductance gFS 0.05 S VDS = -25V, ID = -0.1A 3
Q2 Input Capacitance Ciss 45 pF VDS = -25V, VGS = 0V, f = 1.0MHz 3
Q2 Output Capacitance Coss 25 pF VDS = -25V, VGS = 0V, f = 1.0MHz 3
Q2 Reverse Transfer Capacitance Crss 12 pF VDS = -25V, VGS = 0V, f = 1.0MHz 3
Q2 Turn-On Delay Time tD(ON) 10 ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 3
Q2 Turn-Off Delay Time tD(OFF) 18 ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 3
Power Dissipation (total device) PD 200 mW TA = +25°C, Note 5 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W TA = +25°C, Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Q1 Drain-Source Voltage VDSS 60 V TA = +25°C 2
Q1 Drain-Gate Voltage VDGR 60 V RGS ≤ 1.0MΩ 2
Q1 Gate-Source Voltage Continuous VGSS -20 20 V Continuous 2
Q1 Gate-Source Voltage Pulsed VGSS -40 40 V Pulsed 2
Q1 Drain Current Continuous ID 115 mA TA = +25°C, Note 5 2
Q1 Drain Current Continuous @ +100°C ID 73 mA Continuous @ +100°C, Note 5 2
Q1 Drain Current Pulsed ID 800 mA Pulsed, Note 5 2
Q2 Drain-Source Voltage VDSS -50 V TA = +25°C 2
Q2 Drain-Gate Voltage VDGR -50 V RGS ≤ 20KΩ 2
Q2 Gate-Source Voltage Continuous VGSS -20 20 V Continuous 2
Q2 Drain Current Continuous ID -130 mA TA = +25°C, Note 5 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BSS8402DWQ-7
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bss8402dwq-7-etched.step / bss8402dwq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss8402dwq-7.step / bss8402dwq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 c1385d8ef0065ecb, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF