BSS84 P-Channel MOSFET

@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "bss84",+  "title": "BSS84 P-Channel MOSFET",+  "brief": "-50 V P-channel enhancement MOSFET in SOT-23 for high-side switching and level shifting.",   "version": "0.1.0",-  "type": "component",-  "description": "-50 V P-channel enhancement MOSFET in SOT-23 for high-side switching and level shifting.",+  "license": "CC-BY-SA-4.0",   "tags": [     "mosfet",     "p-channel",@@ -11,6 +14,92 @@     "high-side",     "diodes"   ],+  "component": {+    "mpn": "BSS84",+    "manufacturer": "Diodes Incorporated",+    "package": "SOT-23",+    "pin_count": 3,+    "category": "Discrete Semiconductor",+    "subcategory": "MOSFET",+    "datasheet": "https://www.diodes.com/assets/Datasheets/BSS84.pdf",+    "parts": {+      "symbol": "bss84.kicad_sym",+      "footprint": "bss84.kicad_mod",+      "model_3d": "bss84.glb",+      "model_3d_step": "bss84.step"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Enhancement-mode P-channel control terminal. VGS(TH) between -0.8V and -2.0V; drive to -5V or more negative (up to \u00b120V max VGSS) to fully enhance the channel."+      },+      {+        "number": "2",+        "name": "S",+        "type": "passive",+        "description": "Source. Reference terminal for VGS. Body diode anode connects internally to source (P-channel body diode from drain to source)."+      },+      {+        "number": "3",+        "name": "D",+        "type": "passive",+        "description": "Drain. Switched terminal. -50V max VDSS; -130mA continuous ID, -1.2A pulsed IDM. RDS(ON) typ 3.2\u03a9 / 10\u03a9 max at VGS=-5V, ID=-100mA."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://www.diodes.com/assets/Datasheets/BSS84.pdf",+        "pages": 6,+        "sha256": "a4e89efffb9e0283",+        "source_tier": "mfr"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Type": "P-channel enhancement MOSFET",+      "Drain-source voltage (VDS)": "-50 V",+      "Continuous drain current (ID)": "-130 mA",+      "On-resistance (RDS(on))": "10 ohm max at VGS = -10 V",+      "Gate threshold voltage": "-0.8 V to -3 V",+      "Power dissipation": "360 mW",+      "Operating temperature": "-55 C to 150 C"+    }+  },+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "P-channel MOSFET",+    "high-side switch",+    "load switch",+    "reverse polarity protection",+    "level shifter"+  ],+  "discovery_pitch": "A small P-channel MOSFET for high-side load switching, reverse-polarity protection, and I2C level shifting, paired with the BSS138.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -27,10 +116,5 @@     "docs/bss84-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file