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BSS84-7-F-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS84-7-F-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

BSS84-7-F-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS), with VGS(th) of -1 V to -3 V.
2 S passive Source of the P-channel MOSFET; the device is rated for a drain-source voltage of -60 V (VDS).
3 D passive Drain of the P-channel MOSFET; continuous drain current is rated -500 mA at TA = 25 °C and -350 mA at TA = 100 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -500 mA TA = 25 °C 1
Continuous Drain Current ID -350 mA TA = 100 °C 1
Pulsed Drain Current IDM -1500 mA 1
Power Dissipation PD 460 mW TA = 25 °C 1
Power Dissipation PD 240 mW TA = 100 °C 1
Maximum Junction-to-Ambient RthJA 350 °C/W Surface mounted on FR4 board 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -10 µA 2
Gate-Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage IGSS -200 200 nA VDS = 0 V, VGS = ±10 V 2
Gate-Body Leakage IGSS -500 500 nA VDS = 0 V, VGS = ±10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±5 V 2
Zero Gate Voltage Drain Current IDSS -25 VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -250 VDS = -60 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current ID(on) -50 mA VGS = -10 V, VDS = -4.5 V 2
On-State Drain Current ID(on) -600 mA VGS = -10 V, VDS = -10 V 2
Drain-Source On-Resistance RDS(on) 4 Ω VGS = -4.5 V, ID = -25 mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS = -10 V, ID = -100 mA 2
Drain-Source On-Resistance RDS(on) 9 Ω VGS = -10 V, ID = -100 mA, TJ = 125 °C 2
Forward Transconductance gfs 80 mS VDS = -10 V, ID = -100 mA 2
Diode Forward Voltage VSD -1.4 V IS = -100 mA, VGS = 0 V 2
Total Gate Charge Qg 2 nC VDS = -30 V, VGS = -15 V, ID = -100 mA 2
Gate-Source Charge Qgs 1.2 nC 2
Gate-Drain Charge Qgd 0.8 nC 2
Input Capacitance Ciss 23 pF VDS = -25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 10 pF 2
Reverse Transfer Capacitance Crss 5 pF 2
Turn-On Time td(on) 20 ns VDD = -25 V, RL = 150, ID = -200 mA, VGEN = -10 V, Rg = 10 2
Turn-Off Time td(off) 35 ns 2

CAD (KiCad official)

  • Symbol: BSS84-7-F-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: bss84-7-f-vb-etched.step / bss84-7-f-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss84-7-f-vb.step / bss84-7-f-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 72a6a21faa179179, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF