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BSS83PH6327-VB

VBsemi Elec · MOSFETs · SOT-23

BSS83PH6327-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGS is rated ±20 V in the absolute maximum ratings.
2 S passive Source terminal; diode forward voltage VSD is specified at up to -1.4 V with IS = -100 mA and VGS = 0 V.
3 D passive Drain terminal; continuous drain current is -500 mA at TA = 25 °C with drain-source voltage VDS = -60 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -500 mA TA = 25 °C 1
Continuous Drain Current ID -350 mA TA = 100 °C 1
Pulsed Drain Current IDM -1500 mA 1
Power Dissipation PD 460 mW TA = 25 °C 1
Power Dissipation PD 240 mW TA = 100 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 350 °C/W 1
Gate-Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 10 µA 2
Gate-Body Leakage IGSS -10 10 µA VDS = 0 V, VGS = ± 20 V 2
Gate-Body Leakage IGSS -200 200 nA VDS = 0 V, VGS = ± 10 V 2
Gate-Body Leakage IGSS -500 500 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 5 V 2
Zero Gate Voltage Drain Current IDSS -25 VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -250 VDS = - 60 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current ID(on) -50 mA VGS = - 10 V, VDS = - 4.5 V 2
On-State Drain Current ID(on) -600 mA VGS = - 10 V, VDS = - 10 V 2
Drain-Source On-Resistance RDS(on) 4 Ω VGS = - 4.5 V, ID = - 25 mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS = - 10 V, ID = - 100 mA 2
Drain-Source On-Resistance RDS(on) 9 Ω VGS = - 10 V, ID = - 100 mA, TJ = 125 °C 2
Forward Transconductance gfs 80 mS VDS = - 10 V, ID = - 100 mA 2
Diode Forward Voltage VSD -1.4 V IS = - 100 mA, VGS = 0 V 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BSS83PH6327-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bss83ph6327-vb-etched.step / bss83ph6327-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss83ph6327-vb.step / bss83ph6327-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 a2bd0ced47d298c7, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF