# BSS816NWH6327XTSA1-HXY

**HXY MOSFET** · MOSFETs · SOT-323

BSS816NWH6327XTSA1-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates gate-source voltage VGS at ±12 V and states operation with gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDS at 20 V and continuous drain current ID at 2 A. |
| 3 | S | passive | Source terminal; the maximum continuous drain-to-source diode forward current IS is 1.0 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 2 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 0.3 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | θJA |  |  | 125 | ℃/W | Note 2: surface mounted on FR4 board using the minimum recommended pad size | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID =250μA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS =18V, VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS =±12V, VDS = 0V | 2 |
| Gate threshold voltage (note2) | VGS(th) | 0.4 | 0.7 | 1 | V | VDS =VGS, ID =250μA | 2 |
| Drain-source on-resistance (note2) | RDS(on) |  |  | 85 | mΩ | VGS =2.5V, ID =0.3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 1 | A |  | 2 |
| Diode forward voltage | VSD |  |  | 1.2 | V | IS=1.0A, VGS =0V | 2 |
| Input capacitance | Ciss |  | 300 |  | pF | VDS =10V, VGS =0V, f =1MHz | 2 |
| Output capacitance | Coss |  | 120 |  | pF |  | 2 |
| Reverse transfer capacitance | Crss |  | 80 |  | pF |  | 2 |
| Turn-on delay time | td(on) |  | 15 |  | nS | VGS=4.5V, VDS=10V, RL=5.1Ω, RG=5.1Ω | 2 |
| Turn-on rise time | tr |  | 85 |  | nS |  | 2 |
| Turn-off delay time | td(off) |  | 65 |  | nS |  | 2 |
| Turn-off fall time | tf |  | 27 |  | nS |  | 2 |

## CAD (KiCad official)

- Symbol: `BSS816NWH6327XTSA1-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `bss816nwh6327xtsa1-hxy-etched.step` / `bss816nwh6327xtsa1-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss816nwh6327xtsa1-hxy.step` / `bss816nwh6327xtsa1-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/bss816nwh6327xtsa1-hxy-datasheet.pdf) (4 pp, sha256 `8f2ffab469fa8b4c`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss816nwh6327xtsa1-hxy-datasheet.pdf)