component
BSS806NH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS806NH6327
Infineon Technologies · MOSFETs · SOT-23
BSS806NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement-mode MOSFET, logic level rated at 1.8 V, with a maximum gate-source voltage of ±8 V. |
| 2 | S | passive | Source of the N-channel MOSFET, shown at the bottom of the symbol with the body diode connected between source and drain. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated VDS 20 V and continuous drain current 2.3 A at TA=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | V_GS= 0 V, I_D= 250 µA | 2 | ||
| Gate threshold voltage | V_GS(th) | 0.3 | 0.55 | 0.75 | V | V_DS=V_GS, I_D=11 µA | 2 |
| Drain-source leakage current | I_DSS | 1 | μA | V_DS=20 V, V_GS=0 V, T_j=25 °C | 2 | ||
| Drain-source leakage current | I_DSS | 100 | μA | V_DS=20 V, V_GS=0 V, T_j=150 °C | 2 | ||
| Gate-source leakage current | I_GSS | 100 | nA | V_GS=8 V, V_DS=0 V | 2 | ||
| Drain-source on-state resistance | R_DS(on) | 57 | 82 | mΩ | V_GS=1.8 V, I_D=1.3 A | 2 | |
| Drain-source on-state resistance | R_DS(on) | 41 | 57 | mΩ | V_GS=2.5 V, I_D=2.3 A | 2 | |
| Input capacitance | C_iss | 370 | 529 | pF | V_GS=0 V, V_DS=10 V, f=1 MHz | 3 | |
| Output capacitance | C_oss | 118 | 169 | pF | V_GS=0 V, V_DS=10 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | C_rss | 20 | 29 | pF | V_GS=0 V, V_DS=10 V, f=1 MHz | 3 | |
| Diode forward voltage | V_SD | 0.82 | 1.1 | V | V_GS=0 V, I_F=2.3 A, T_j=25 °C | 3 | |
| Diode continuous forward current | I_S | 0.5 | A | 3 | |||
| Diode pulse current | I_S,pulse | 9.3 | A | 3 | |||
| Continuous drain current | I_D | 2.3 | A | T_A=25 °C | 1 | ||
| Continuous drain current | I_D | 1.9 | A | T_A=70 °C | 1 | ||
| Pulsed drain current | I_D,pulse | 9.3 | A | T_A=25 °C | 1 | ||
| Avalanche energy, single pulse | E_AS | 10.8 | mJ | I_D=2.3 A, R_GS=25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | I_D=2.3 A, V_DS=16 V, di/dt=200 A/µs, T_j,max=150 °C | 1 | ||
| Gate source voltage | V_GS | -8 | 8 | V | 1 | ||
| Power dissipation | P_tot | 0.5 | W | T_A=25 °C | 1 | ||
| Operating and storage temperature | T_j, T_stg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient | R_thJA | 250 | K/W | minimal footprint | 2 |
CAD (KiCad official)
- Symbol:
BSS806NH6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss806nh6327-etched.step/bss806nh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss806nh6327.step/bss806nh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
b71f6f15a5d241bf, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).