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BSS806NEH6327

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS806NEH6327

Infineon Technologies · MOSFETs · SOT-23

BSS806NEH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement-mode MOSFET, ultra logic level (1.8 V rated) with RDS(on) max 82 mΩ at VGS=1.8 V, VGS limit ±8 V, ESD class 1C (1 kV to 2 kV HBM).
2 S passive Source of the N-channel MOSFET, carrying continuous drain current up to 2.3 A at TA=25 °C and pulsed 9.3 A.
3 D passive Drain of the N-channel MOSFET with VDS rating of 20 V and continuous current of 2.3 A at TA=25 °C (1.9 A at 70 °C).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TA=25 °C) ID 2.3 A TA=25 °C 1
Continuous drain current (TA=70 °C) ID 1.9 A TA=70 °C 1
Pulsed drain current ID,pulse 9.3 A TA=25 °C 1
Avalanche energy, single pulse EAS 10.8 mJ ID=2.3 A, RGS=25 W 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=2.3 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -8 8 V 1
Power dissipation Ptot 0.5 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS 20 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 0.3 0.55 0.75 V VDS=VGS, ID=11 µA 2
Drain-source leakage current IDSS 1 mA VDS=20 V, VGS=0 V, Tj=25 °C 2
Drain-source leakage current IDSS 100 VDS=20 V, VGS=0 V, Tj=150 °C 2
Gate-source leakage current IGSS 6 µA VGS=8 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 57 82 mW VGS=1.8 V, ID=1.3 A 2
Drain-source on-state resistance RDS(on) 41 57 mW VGS=2.5 V, ID=2.3 A 2
Transconductance gfs 9 S /VDS/>2/ID/RDS(on)max, ID=1.9 A 2
Input capacitance Ciss 370 529 pF VGS=0 V, VDS=10 V, f=1 MHz 3
Output capacitance Coss 118 169 pF VGS=0 V, VDS=10 V, f=1 MHz 3
Reverse transfer capacitance Crss 20 29 pF VGS=0 V, VDS=10 V, f=1 MHz 3
Diode continuous forward current IS 0.5 A 3
Diode pulse current IS,pulse 9.3 A 3
Diode forward voltage VSD 0.82 1.1 V VGS=0 V, IF=2.3 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: BSS806NEH6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss806neh6327-etched.step / bss806neh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss806neh6327.step / bss806neh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 7c7240d54323e17b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF